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2N1844

STMicroelectronics

2N1844 by STMicroelectronics

STMicroelectronics' 2N1844 is a Silicon Controlled Rectifier with max. DC Gate Trigger Current of 100mA, Non Repetitive Peak On-state Current of 125A, and Max On-state Current of 10A. It operates b/w -40 to 100 °C and is used in various applications requiring SCR technology.

Median Price

$22.255

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 20 parts In-Stock

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Bristol Electronics

USA . 2,056 parts In-Stock

1+ parts

$15.720

100+ parts

$14.510

1k+ parts

$12.890

10k+ parts

-

2,056

$15.720

$14.510

$12.890

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American Microsemiconductor Inc.

USA . 2 parts In-Stock

1+ parts

$28.790

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2

$28.790

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Electronic Expediters

USA . 5,972 parts In-Stock

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5,972

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Vyrian

USA . 5,348 parts In-Stock

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5,348

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Digiode

USA . 3,710 parts In-Stock

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3,710

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Anansix

USA . 1,481 parts In-Stock

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DigiKey Marketplace

USA . 20 parts In-Stock

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20

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Distributors (Availability)

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Native Components

USA . 725 parts In-Stock

1+ parts

$0.399

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-

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$0.384

725

$0.399

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$0.384

Northwest PG Solutions

USA . 2,070 parts In-Stock

1+ parts

$0.439

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-

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$0.388

2,070

$0.439

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$0.388

IDEA Electronic Components Group

UK . 475 parts In-Stock

1+ parts

$3.126

100+ parts

-

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$2.814

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475

$3.126

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$2.814

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MKK Technologies

India . 622 parts In-Stock

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$5.879

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622

$5.879

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DigiPath Technology Company

USA . 622 parts In-Stock

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$5.879

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622

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Microchip USA

USA . 10,457 parts In-Stock

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Corphita

USA . 3,048 parts In-Stock

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3,048

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Parana Technologies

USA . 188 parts In-Stock

1+ parts

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$3.738

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188

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$3.738

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Overview

Unlock the power of advanced technology with the 2N1844 from STMicroelectronics, a leading manufacturer known for its high-quality components. As a Silicon Controlled Rectifier (SCR), this versatile device is designed for a wide range of applications, providing reliable performance and efficiency. With a maximum DC Gate Trigger Current of 100 mA and Non Repetitive Peak On-state Current of 125 A, the 2N1844 offers superior functionality in various circuits. Experience the value and benefits of this product, whether you're in the automotive, industrial, or consumer electronics industry. Trust STMicroelectronics to deliver excellence with the 2N1844.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 100 mA

This product has a high maximum DC Gate Trigger Current which ensures reliable and consistent triggering of the SCR, making it a good choice for applications requiring precise control.

Non Repetitive Peak On-state Current: 125 A

The high Non Repetitive Peak On-state Current value allows the SCR to handle occasional high current spikes without damage, making it suitable for applications with varying load conditions.

Maximum On-state Current: 10 A

With a Maximum On-state Current of 10 A, this product can handle moderate power levels efficiently, making it ideal for applications where medium power handling is required.

Maximum Leakage Current: 1 mA

The low Maximum Leakage Current ensures minimal power loss when the SCR is in the off state, leading to improved energy efficiency in the overall system.

Maximum Operating Temperature: 100 °C

The high Maximum Operating Temperature rating of 100 °C ensures reliable operation even in demanding environments with elevated temperatures, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

The low Minimum Operating Temperature of -40 °C allows the SCR to operate in cold environments without any performance degradation, making it versatile for use in different temperature conditions.

Maximum DC Gate Trigger Voltage: 3 V

The low Maximum DC Gate Trigger Voltage requirement of 3 V simplifies the control circuit design and reduces the overall power consumption, making it a convenient choice for low-power applications.

Repetitive Peak Off-state Voltage: 100 V

The high Repetitive Peak Off-state Voltage rating of 100 V allows the SCR to withstand high voltage conditions, making it suitable for applications where voltage spikes are common.

Minimum Critical Rate of Rise of Off-state Voltage: 30 V/us

The Minimum Critical Rate of Rise of Off-state Voltage of 30 V/us ensures fast turn-off response of the SCR, making it a reliable choice for applications requiring quick switching speeds.

Maximum Holding Current: 200 mA

The high Maximum Holding Current value of 200 mA ensures the SCR can remain in the on state without the need for continuous gate current, making it a reliable choice for applications where gate current availability is limited.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1844 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

100 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

200 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

125 A

Maximum On-state Current:

10 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1844 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-228-6894, 5961002286894

NIIN

002286894

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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