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2N1850A

STMicroelectronics

2N1850A by STMicroelectronics

STMicroelectronics' 2N1850A is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 150mA, Non Repetitive Peak On-state Current of 125A, and Max On-state Current of 10A. It operates b/w -65 °C to 125°C and has a Max DC Gate Trigger Voltage of 3.7V. Ideal for applications requiring SCR trigger devices with Repetitive Peak Off-state Voltage up to 500V.

Median Price

$15.720

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 50 parts In-Stock

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Bristol Electronics

USA . 350 parts In-Stock

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$15.720

100+ parts

$14.510

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$12.890

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350

$15.720

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$12.890

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Vyrian

USA . 7,846 parts In-Stock

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Anansix

USA . 2,755 parts In-Stock

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Digiode

USA . 2,248 parts In-Stock

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DigiKey Marketplace

USA . 50 parts In-Stock

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ECAB

Sweden . 10 parts In-Stock

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Microfarads

USA . 1 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,286 parts In-Stock

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$3.180

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$2.862

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MKK Technologies

India . 785 parts In-Stock

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$5.979

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$5.979

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DigiPath Technology Company

USA . 785 parts In-Stock

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$5.979

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$5.979

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Microchip USA

USA . 6,813 parts In-Stock

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$18.200

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Corphita

USA . 3,411 parts In-Stock

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Northwest PG Solutions

USA . 1,782 parts In-Stock

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Parana Technologies

USA . 1,491 parts In-Stock

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$3.802

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Native Components

USA . 202 parts In-Stock

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Overview

The STMicroelectronics 2N1850A is a top-of-the-line Silicon Controlled Rectifier (SCR) that guarantees reliability and superior performance. With a maximum DC Gate Trigger Current of 150 mA and Non Repetitive Peak On-state Current of 125 A, this product is ideal for a wide range of applications. STMicroelectronics, known for their commitment to quality and innovation, ensures that the 2N1850A offers unmatched value and benefits to customers. From industrial machinery to consumer electronics, this SCR delivers the power and efficiency needed to drive success in any project.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 150 mA

This allows for precise control of the SCR, making it suitable for applications where accuracy and stability are crucial.

Non Repetitive Peak On-state Current: 125 A

This high current capability enables the SCR to handle sudden surges in power, making it reliable in demanding operating conditions.

Maximum On-state Current: 10 A

With a high maximum on-state current, this SCR can efficiently handle regular operating loads without overheating or failing prematurely.

Maximum Operating Temperature: 125 °C

This high operating temperature range makes the SCR suitable for use in environments with high heat levels, increasing its versatility.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, this device offers high reliability and efficiency in controlling power flow, making it a preferred choice for many applications.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures that this SCR can function effectively in cold environments, expanding its usability across various settings.

Maximum DC Gate Trigger Voltage: 3.7 V

The low trigger voltage requirement enables efficient control and activation of this SCR, reducing energy consumption and enhancing performance.

Repetitive Peak Off-state Voltage: 500 V

With a high off-state voltage, this SCR can effectively isolate circuits and prevent unwanted current flow, ensuring safety and reliability in operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1850A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Maximum DC Gate Trigger Current:

150 mA

Maximum DC Gate Trigger Voltage:

3.7 V

Non Repetitive Peak On-state Current:

125 A

Maximum On-state Current:

10 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1850A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-341-4165, 5961143414165

NIIN

143414165

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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