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2N1849B

Texas Instruments

2N1849B by Texas Instruments

2N1849B by Texas Instruments is a Silicon Controlled Rectifier with 75mA DC Gate Trigger Current, 150A Non Repetitive Peak On-state Current, and 13A Max On-state Current. It operates b/w -65°C to 125°C and has a max DC Gate Trigger Voltage of 3.5V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

$19.860

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 350 parts In-Stock

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$15.720

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$14.510

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$12.890

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TEDSS.com

USA . 14 parts In-Stock

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$24.000

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Vyrian

USA . 4,869 parts In-Stock

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Digiode

USA . 4,557 parts In-Stock

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Elcom Components

USA . 9 parts In-Stock

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Electronic Expediters

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Native Components

USA . 253 parts In-Stock

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$0.889

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Northwest PG Solutions

USA . 2,219 parts In-Stock

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$0.978

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$0.978

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Parana Technologies

USA . 339 parts In-Stock

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$1.908

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$2.445

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$1.908

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DigiPath Technology Company

USA . 1,120 parts In-Stock

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$2.101

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$1.933

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IDEA Electronic Components Group

UK . 1,895 parts In-Stock

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$2.144

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$1.930

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ChromeModa Solutions

Germany . 1,157 parts In-Stock

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$2.144

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$1.758

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AZTECH Wire

Italy . 537 parts In-Stock

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$10.613

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One Stop Electronics

USA . 291 parts In-Stock

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Corphita

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Assy Fe

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Overview

Unleash the power of innovation with the Texas Instruments 2N1849B Silicon Controlled Rectifier. Manufactured by a trusted industry leader, this SCR offers unmatched quality and reliability for a wide range of applications. With a maximum on-state current of 13 A and a non-repetitive peak on-state current of 150 A, this SCR delivers exceptional performance in demanding environments. Trust in Texas Instruments to provide cutting-edge technology that meets your needs for efficiency and precision. Elevate your projects with the 2N1849B and experience the difference that superior quality can make.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 75 mA

This low gate trigger current requirement helps in reducing power consumption and making the SCR more energy-efficient.

Non Repetitive Peak On-state Current: 150 A

High peak on-state current capability allows this SCR to handle heavy loads and surges, making it suitable for high power applications.

Maximum On-state Current: 13 A

With a maximum on-state current of 13 A, this SCR can handle moderate to high power requirements, making it versatile and suitable for a range of applications.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power wastage when the SCR is in the off state, contributing to its overall efficiency.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SCR can withstand elevated temperatures, making it reliable in harsh environmental conditions.

Minimum Operating Temperature: -65 °C

The wide operating temperature range of -65°C to 125°C enables this SCR to be used in both extremely cold and hot environments, enhancing its versatility.

Maximum DC Gate Trigger Voltage: 3.5 V

Low gate trigger voltage requirement simplifies the control circuit design and operation of the SCR, making it easier to integrate into different systems.

Repetitive Peak Off-state Voltage: 400 V

The high repetitive peak off-state voltage ensures that this SCR can handle common voltage spikes and fluctuations, offering better protection to connected devices.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1849B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

3.5 V

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

13 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1849B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-710-9137, 5961007109137

NIIN

007109137

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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