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2N1848A

STMicroelectronics

2N1848A by STMicroelectronics

STMicroelectronics' 2N1848A is a Silicon Controlled Rectifier with max. DC Gate Trigger Current of 150mA, Non Repetitive Peak On-state Current of 125A, and Max. On-state Current of 10A. It operates b/w -65 °C to 125°C and has a Max. DC Gate Trigger Voltage of 3.7V. Ideal for applications requiring precise current control like power supplies and motor drives.

Median Price

$15.720

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 50 parts In-Stock

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Bristol Electronics

USA . 696 parts In-Stock

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$15.720

100+ parts

$14.510

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$12.890

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696

$15.720

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Digiode

USA . 4,460 parts In-Stock

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Vyrian

USA . 4,297 parts In-Stock

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Anansix

USA . 1,476 parts In-Stock

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DigiKey Marketplace

USA . 50 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 9 parts In-Stock

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MISTER SPROCKETS

USA . 1 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 159 parts In-Stock

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$4.164

100+ parts

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$3.748

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$3.748

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MKK Technologies

India . 2,315 parts In-Stock

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$7.830

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$7.830

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DigiPath Technology Company

USA . 2,315 parts In-Stock

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$7.830

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Microchip USA

USA . 10,045 parts In-Stock

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Corphita

USA . 2,226 parts In-Stock

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Northwest PG Solutions

USA . 1,896 parts In-Stock

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Parana Technologies

USA . 1,009 parts In-Stock

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$4.979

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Native Components

USA . 108 parts In-Stock

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Overview

Unlock the power of innovation with the STMicroelectronics 2N1848A Silicon Controlled Rectifier. Manufactured by the industry leader, this versatile component offers reliable performance in a wide range of applications. From industrial automation to power supplies, this SCR delivers exceptional quality and efficiency. Trust in STMicroelectronics to provide cutting-edge technology that meets your needs. Elevate your projects with the 2N1848A and experience the difference for yourself.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 150 mA

With a high maximum DC gate trigger current, this SCR can be easily triggered to turn on, providing reliable performance.

Non Repetitive Peak On-state Current: 125 A

The high non repetitive peak on-state current capability allows this SCR to handle sudden high current surges effectively.

Maximum On-state Current: 10 A

This SCR offers a maximum on-state current of 10 A, suitable for various applications requiring moderate current handling capacity.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this SCR can withstand high temperatures, making it versatile in different environments.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device provides precise control over switching operations and is ideal for use in power control applications.

Minimum Operating Temperature: -65 °C

With a minimum operating temperature of -65 °C, this SCR can operate effectively in extreme cold conditions.

Maximum DC Gate Trigger Voltage: 3.7 V

The low maximum DC gate trigger voltage of 3.7 V ensures efficient triggering, reducing power consumption and improving overall performance.

Repetitive Peak Off-state Voltage: 300 V

The high repetitive peak off-state voltage rating of 300 V enhances the reliability and safety of this SCR in maintaining off-state conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1848A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Maximum DC Gate Trigger Current:

150 mA

Maximum DC Gate Trigger Voltage:

3.7 V

Non Repetitive Peak On-state Current:

125 A

Maximum On-state Current:

10 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1848A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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