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2N1846A

STMicroelectronics

2N1846A by STMicroelectronics

STMicroelectronics' 2N1846A is a Silicon Controlled Rectifier with max. DC Gate Trigger Current of 150mA, Non Repetitive Peak On-state Current of 125A, and Max On-state Current of 10A. It operates b/w -65 °C to 125°C and has a Max DC Gate Trigger Voltage of 3.7V. Ideal for power control applications requiring high current handling capabilities.

Median Price

$17.660

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 50 parts In-Stock

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50

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Bristol Electronics

USA . 2,070 parts In-Stock

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$15.720

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$14.510

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$12.890

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2,070

$15.720

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$12.890

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Forefront Electronics and Design

USA . 3 parts In-Stock

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$19.600

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$19.600

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Vyrian

USA . 4,961 parts In-Stock

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Anansix

USA . 2,791 parts In-Stock

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Digiode

USA . 1,494 parts In-Stock

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DigiKey Marketplace

USA . 50 parts In-Stock

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ECAB

Sweden . 12 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 211 parts In-Stock

1+ parts

$3.189

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$2.870

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211

$3.189

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$2.870

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MKK Technologies

India . 2,184 parts In-Stock

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$5.996

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$5.996

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DigiPath Technology Company

USA . 2,184 parts In-Stock

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$5.996

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$5.996

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Native Components

USA . 834 parts In-Stock

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$8.930

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834

$8.930

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Northwest PG Solutions

USA . 2,316 parts In-Stock

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$9.823

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$8.841

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2,316

$9.823

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Microchip USA

USA . 8,822 parts In-Stock

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$18.200

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Glotronic Ltd.

UK . 2,500 parts In-Stock

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2,500

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Corphita

USA . 2,085 parts In-Stock

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Parana Technologies

USA . 266 parts In-Stock

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$3.813

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$3.813

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Overview

Upgrade your electronic devices with the reliable 2N1846A SCR by STMicroelectronics. Renowned for their high-quality components, STMicroelectronics delivers superior performance and durability in every product. From power supplies to motor control, the 2N1846A offers versatility and efficiency for a wide range of applications. Trust in STMicroelectronics to provide you with top-notch products that enhance your projects and deliver exceptional value.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 150 mA

This high gate trigger current ensures reliable and consistent triggering of the SCR, making it suitable for a variety of applications.

Non Repetitive Peak On-state Current: 125 A

The high peak on-state current allows for handling high power loads for short durations, making it suitable for heavy-duty applications.

Maximum On-state Current: 10 A

The maximum on-state current rating of 10 A provides a good balance between performance and safety, making it suitable for a wide range of applications.

Maximum Operating Temperature: 125 °C

The high operating temperature rating of 125 °C ensures reliable operation even in harsh environments, making it suitable for industrial applications.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), this product offers precise control over the current flow, making it ideal for applications requiring controlled power delivery.

Minimum Operating Temperature: -65 °C

The low operating temperature rating of -65 °C allows the SCR to operate in extreme cold conditions, making it suitable for a variety of environments.

Maximum DC Gate Trigger Voltage: 3.7 V

The low gate trigger voltage of 3.7 V ensures energy-efficient operation, making it suitable for applications where power consumption is a concern.

Repetitive Peak Off-state Voltage: 200 V

The high off-state voltage rating of 200 V allows for handling higher voltage levels, making it suitable for applications requiring high voltage switching.

Minimum Critical Rate of Rise of Off-state Voltage: 30 V/us

The minimum critical rate of rise of off-state voltage of 30 V/us ensures fast switching speeds, making it suitable for applications requiring rapid response times.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1846A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

150 mA

Maximum DC Gate Trigger Voltage:

3.7 V

Non Repetitive Peak On-state Current:

125 A

Maximum On-state Current:

10 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1846A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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