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2N1844A

STMicroelectronics

2N1844A by STMicroelectronics

STMicroelectronics' 2N1844A is a Silicon Controlled Rectifier with max. DC Gate Trigger Current of 150mA, Non Repetitive Peak On-state Current of 125A, and Max. On-state Current of 10A. It operates b/w -65 °C to 125°C and has a Max. DC Gate Trigger Voltage of 3.7V. Ideal for applications requiring precise current control in various temperature conditions.

Median Price

$15.720

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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DigiKey

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Bristol Electronics

USA . 1,064 parts In-Stock

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$15.720

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$14.510

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$12.890

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Vyrian

USA . 6,004 parts In-Stock

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Digiode

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Anansix

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DigiKey Marketplace

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Elcom Components

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First Choice Components Inc.

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IDEA Electronic Components Group

UK . 370 parts In-Stock

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$2.023

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MKK Technologies

India . 783 parts In-Stock

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DigiPath Technology Company

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Native Components

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Northwest PG Solutions

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Microchip USA

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Parana Technologies

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Perfect Parts

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RTC Component Inc.

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Overview

Unleash the power of innovation with the STMicroelectronics 2N1844A Silicon Controlled Rectifier (SCR). Known for their superior quality and reliability, STMicroelectronics is a trusted manufacturer in the industry. The 2N1844A is perfect for a wide range of applications, offering a maximum DC Gate Trigger Current of 150 mA and a Non Repetitive Peak On-state Current of 125 A. With a Maximum Operating Temperature of 125 °C, this SCR provides exceptional performance under various conditions. Elevate your projects with the value, benefits, and advantages that the 2N1844A delivers to customers.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 150 mA

With a high gate trigger current, this SCR can be easily activated, allowing for precise and reliable control of the switching action.

Non Repetitive Peak On-state Current: 125 A

The high non-repetitive peak on-state current capability of this SCR enables it to handle momentary high current surges without damage, making it suitable for demanding applications.

Maximum On-state Current: 10 A

The SCR's maximum on-state current rating of 10A ensures that it can reliably handle continuous current flow without overheating, making it ideal for various power control applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SCR can operate in challenging thermal environments without compromising performance, ensuring long-term reliability.

Trigger Device Type: SCR

Being an SCR, this device offers high power handling capabilities and fast switching speeds, making it suitable for high-power applications requiring efficient and reliable switching.

Maximum DC Gate Trigger Voltage: 3.7 V

The low gate trigger voltage of 3.7V helps in reducing the power consumption and control signal requirements for activating the SCR, making it energy-efficient and cost-effective.

Repetitive Peak Off-state Voltage: 100 V

With a high repetitive peak off-state voltage rating, this SCR can withstand repeated voltage spikes without breakdown, ensuring robust performance in various electrical systems.

Minimum Critical Rate of Rise of Off-state Voltage: 30 V/us

The minimum critical rate of rise of off-state voltage of 30 V/us ensures that the SCR can quickly respond to changes in voltage levels, allowing for efficient control and protection against voltage surges.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1844A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

150 mA

Maximum DC Gate Trigger Voltage:

3.7 V

Non Repetitive Peak On-state Current:

125 A

Maximum On-state Current:

10 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1844A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-224-3670, 5961012243670, 5961-00-228-6894, 5961002286894, 5961-01-302-3349, 5961013023349, 5961-14-352-1549, 5961143521549

NIIN

012243670, 002286894, 013023349, 143521549

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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