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2N1849

STMicroelectronics

2N1849 by STMicroelectronics

STMicroelectronics' 2N1849 is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 100mA, Non Repetitive Peak On-state Current of 125A, and Max On-state Current of 10A. It operates b/w -40 to 100 °C and has a Repetitive Peak Off-state Voltage of 400V. Ideal for power control applications.

Median Price

$15.720

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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DigiKey

USA . 50 parts In-Stock

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American Microsemiconductor Inc.

USA . 20 parts In-Stock

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$12.750

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Bristol Electronics

USA . 350 parts In-Stock

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$15.720

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$14.510

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$12.890

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Forefront Electronics and Design

USA . 33 parts In-Stock

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$19.600

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Vyrian

USA . 5,298 parts In-Stock

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Digiode

USA . 4,525 parts In-Stock

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Anansix

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DigiKey Marketplace

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MISTER SPROCKETS

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ECAB

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Microfarads

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Native Components

USA . 935 parts In-Stock

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$1.012

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Northwest PG Solutions

USA . 1,223 parts In-Stock

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$1.114

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IDEA Electronic Components Group

UK . 1,374 parts In-Stock

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MKK Technologies

India . 414 parts In-Stock

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$7.536

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$7.536

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DigiPath Technology Company

USA . 414 parts In-Stock

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$7.536

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Microchip USA

USA . 8,495 parts In-Stock

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Parana Technologies

USA . 2,019 parts In-Stock

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$4.792

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Corphita

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Overview

Discover the power of the 2N1849 by STMicroelectronics, a top-of-the-line Silicon Controlled Rectifier that promises unmatched quality and performance. With a maximum DC Gate Trigger Current of 100 mA and Non Repetitive Peak On-state Current of 125 A, this SCR is perfect for a wide range of applications. Whether you're looking to control power in industrial machinery or regulate voltage in household appliances, the 2N1849 is the reliable solution you need. Trust in STMicroelectronics' reputation for excellence and invest in this superior product today.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 100 mA

High gate trigger current allows for reliable triggering of the SCR, ensuring proper functionality.

Non Repetitive Peak On-state Current: 125 A

Capable of handling high peak currents without damage, making it suitable for demanding applications.

Maximum On-state Current: 10 A

Can handle moderate continuous currents, making it versatile for different load requirements.

Maximum Leakage Current: 1 mA

Low leakage current ensures energy efficiency and prevents unnecessary power loss.

Maximum Operating Temperature: 100 °C

Wide operating temperature range allows for use in various environmental conditions.

Trigger Device Type: SCR

Being an SCR allows for reliable and precise switching of currents in applications requiring controlled rectification.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage requirement allows for easy interfacing with control circuits.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating provides safety margin for voltage spikes and surges in the circuit.

Minimum Critical Rate of Rise of Off-state Voltage: 30 V/us

Fast rate of rise of off-state voltage capability protects the SCR against voltage transients.

Maximum Holding Current: 200 mA

High holding current ensures that the SCR remains in the on-state even under varying load conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1849 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

100 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

200 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

125 A

Maximum On-state Current:

10 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1849 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-939-4484, 5961009394484, 5961-14-268-2850, 5961142682850

NIIN

009394484, 142682850

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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