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TICP106D

Texas Instruments

TICP106D by Texas Instruments

TICP106D by Texas Instruments is a Silicon Controlled Rectifier with max. DC Gate Trigger Current of 0.2mA, On-state Current of 2A, and Off-state Voltage of 400V. It is ideal for applications requiring precise current control in power electronics circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 9,033 parts In-Stock

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Digiode

USA . 4,852 parts In-Stock

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Classic Components Corporation

USA . 230 parts In-Stock

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ABC Electronics Ltd.

UK . 11 parts In-Stock

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One Stop Electronics

USA . 707 parts In-Stock

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$3.100

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707

$3.100

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Parana Technologies

USA . 1,696 parts In-Stock

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$4.359

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$4.777

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DigiPath Technology Company

USA . 657 parts In-Stock

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$4.800

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$4.416

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657

$4.800

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ChromeModa Solutions

Germany . 4,654 parts In-Stock

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$4.898

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$4.016

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$4.898

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IDEA Electronic Components Group

UK . 392 parts In-Stock

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$4.898

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$4.408

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AZTECH Wire

Italy . 781 parts In-Stock

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$8.227

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Corphita

USA . 3,119 parts In-Stock

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Overview

Enhance your electronic projects with the TICP106D by Texas Instruments, a top-quality Silicon Controlled Rectifier that delivers reliable performance and precise control. With a maximum On-state current of 2A and a Trigger Device Type of SCR, this component is ideal for a wide range of applications. Whether you're working on power supplies, motor control systems, or lighting controls, the TICP106D offers unparalleled value and efficiency. Trust Texas Instruments for superior technology and innovation in every component.

Feature Benefit Bullets

Maximum DC Gate Trigger Current 0.2 mA

Low gate trigger current ensures efficient switching and control of the SCR, enhancing the overall performance of the product.

Non Repetitive Peak On-state Current 15 A

High peak on-state current allows the SCR to handle sudden surges of current effectively, making it suitable for applications requiring high power handling capabilities.

Maximum On-state Current 2 A

With a maximum on-state current of 2 A, this SCR is able to efficiently handle moderate to high current loads, making it versatile for a wide range of applications.

Maximum Leakage Current 0.01 mA

Low leakage current ensures minimal power loss and improved efficiency in the operation of the SCR, making it a reliable choice for low-power applications.

Trigger Device Type SCR

As a Silicon Controlled Rectifier, this device offers precise control over the flow of current, making it ideal for applications where accurate switching is critical.

Maximum DC Gate Trigger Voltage 1 V

Low gate trigger voltage allows for quick and precise triggering of the SCR, enabling fast response times and improved performance in high-speed applications.

Repetitive Peak Off-state Voltage 400 V

The high off-state voltage rating of 400 V ensures that the SCR can withstand fluctuations in voltage levels without compromising its operation, making it reliable for use in varying power supply conditions.

Minimum Critical Rate of Rise of Off-state Voltage 10 V/us

The minimum critical rate of rise of off-state voltage of 10 V/us ensures that the SCR can respond quickly to changes in voltage levels, enhancing its efficiency in applications where rapid switching is required.

Maximum Holding Current 5 mA

The maximum holding current of 5 mA ensures that the SCR can 'hold' its on-state condition reliably once triggered, making it suitable for continuous operation without the need for continuous triggering.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TICP106D attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

5 mA

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

15 A

Maximum On-state Current:

2 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

TICP106D Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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