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2N2323

Texas Instruments

2N2323 by Texas Instruments

2N2323 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.2 mA, Non Repetitive Peak On-state Current of 15 A, and Max On-state Current of 1.6 A. It is used in applications requiring SCR trigger devices with operating temperatures ranging from -65 to 125 °C.

Median Price

$7.330

Lifecycle Status

Suppliers In-Stock

43

In-Stock Inventory

1k+

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Farnell

UK . 15 parts In-Stock

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$6.170

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$5.630

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RS Americas

USA . 273 parts In-Stock

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$7.330

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$5.500

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$4.770

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273

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Element14

Singapore . 217 parts In-Stock

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Digiode

USA . 7,707 parts In-Stock

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$3.135

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Freelance Electronics

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Component Electronics Inc.

Canada . 15 parts In-Stock

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American Microsemiconductor Inc.

USA . 221 parts In-Stock

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Bristol Electronics

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Ace Electronics

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Nova Conductors

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Vyrian

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Anansix

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Odintec Ltd.

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North Shore Components

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Bisco

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LIBRA Elektronik GmbH

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Electronics Depot

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ACDS - Activité Composants Distribution Service

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ComSIT Distribution GmbH

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LittleDiode

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NexGen Digital

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ECAB

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Lakeview Electronics

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R&J Components

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PC Components Company LLC

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Manoshevitz Elec. Sales

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Resion

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Sunrise Surplus Inc.

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First Choice Components Inc.

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ChromeModa Solutions

Germany . 3,114 parts In-Stock

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$2.180

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$1.788

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Corohmni

South Africa . 174 parts In-Stock

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$2.222

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Corphita

USA . 1,892 parts In-Stock

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$2.970

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IDEA Electronic Components Group

UK . 1,860 parts In-Stock

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$4.185

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$3.767

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$4.397

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$4.001

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$3.606

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$4.397

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Continental Prestige Electronics

USA . 470 parts In-Stock

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$6.080

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Allen Electronics Distributors

USA . 394 parts In-Stock

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$6.980

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DigiPath Technology Company

USA . 981 parts In-Stock

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$7.870

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$7.870

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MKK Technologies

India . 422 parts In-Stock

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$7.870

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Netroflash

USA . 100 parts In-Stock

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$37.230

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$36.485

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Component Stockers USA

USA . 327 parts In-Stock

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$99.990

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 22,131 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

Germany . 6,095 parts In-Stock

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Microchip USA

USA . 4,370 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Argo Parts USA

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Supply Digital

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Parana Technologies

USA . 1,648 parts In-Stock

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$5.004

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Assy Fe

Spain . 97 parts In-Stock

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Perfect Parts

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Kepictronics

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RTC Component Inc.

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Eliminating Global Boundries, Inc

USA . 4 parts In-Stock

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Overview

Unlock the power of reliable performance with the 2N2323 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and durability in their Silicon Controlled Rectifiers (SCR) category. Perfect for various applications, this SCR offers maximum on-state current of 1.6 A and non-repetitive peak on-state current of 15 A. With a maximum operating temperature of 125°C and minimum of -65°C, customers can trust in the versatility and efficiency of this product. Upgrade your systems today with the 2N2323 for seamless operation and enhanced productivity.

Feature Benefit Bullets

Maximum DC Gate Trigger Current 0.2 mA

Low gate trigger current ensures reliable and efficient control of the SCR, leading to stable operation.

Non Repetitive Peak On-state Current 15 A

High peak on-state current capability allows the SCR to handle large transient currents effectively, making it suitable for demanding applications.

Maximum On-state Current 1.6 A

The maximum on-state current rating of 1.6 A indicates the capability of the SCR to conduct high currents continuously without overheating, ensuring durability and performance.

Maximum Leakage Current 0.1 mA

Low leakage current minimizes power losses when the SCR is in the off state, enhancing overall efficiency of the device.

Maximum Operating Temperature 125 °C

High maximum operating temperature of 125°C allows the SCR to withstand elevated temperatures, making it suitable for industrial environments where heat dissipation is a concern.

Trigger Device Type SCR

Being a Silicon Controlled Rectifier, this product offers precise and reliable switching performance, making it ideal for applications requiring accurate control of current flow.

Minimum Operating Temperature -65 °C

Low minimum operating temperature of -65°C ensures the SCR can function effectively in harsh environments with extreme cold conditions.

Maximum DC Gate Trigger Voltage 0.8 V

Low gate trigger voltage requirement of 0.8 V ensures easy and efficient control of the SCR, enabling seamless integration into a variety of circuits.

Repetitive Peak Off-state Voltage 50 V

The high repetitive peak off-state voltage rating of 50 V allows the SCR to block high voltages reliably, making it suitable for applications requiring voltage regulation or switching.

Maximum Holding Current 2 mA

The maximum holding current of 2 mA indicates the minimum current required to maintain the latched state of the SCR, ensuring stable operation once triggered.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N2323 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

2 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

15 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N2323 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-764-3217, 5961007643217, 5961-00-765-6083, 5961007656083, 5961-00-904-7586, 5961009047586, 5961-00-910-2751, 5961009102751, 5961-00-233-4851, 5961002334851, 5961-99-654-3367, 5961996543367

NIIN

007643217, 007656083, 009047586, 009102751, 002334851, 996543367

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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