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2N1601

Texas Instruments

2N1601 by Texas Instruments

2N1601 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 10mA, Non Repetitive Peak On-state Current of 25A, and Max On-state Current of 3A. It operates b/w -60°C to 125°C and has a Repetitive Peak Off-state Voltage of 100V. Ideal for power control applications requiring precise current regulation.

Median Price

$18.000

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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DigiKey

USA . 50 parts In-Stock

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Bristol Electronics

USA . 350 parts In-Stock

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$15.840

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$14.620

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$12.989

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$15.840

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TEDSS.com

USA . 29 parts In-Stock

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$18.000

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American Microsemiconductor Inc.

USA . 18 parts In-Stock

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$37.950

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Vyrian

USA . 8,860 parts In-Stock

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Digiode

USA . 3,903 parts In-Stock

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PUI

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Electronic Expediters

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ECAB

Sweden . 32 parts In-Stock

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LittleDiode

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R&J Components

USA . 1 parts In-Stock

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Native Components

USA . 276 parts In-Stock

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$0.566

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Northwest PG Solutions

USA . 2,216 parts In-Stock

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$0.622

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Parana Technologies

USA . 1,794 parts In-Stock

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$4.041

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$4.505

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DigiPath Technology Company

USA . 833 parts In-Stock

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$4.450

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$4.094

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$4.450

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ChromeModa Solutions

Germany . 1,808 parts In-Stock

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$4.541

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$3.724

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IDEA Electronic Components Group

UK . 1,459 parts In-Stock

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$4.541

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$4.087

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Microchip USA

USA . 6,968 parts In-Stock

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$21.468

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Corphita

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RTC Component Inc.

USA . 1 parts In-Stock

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Overview

Unlock the power of the 2N1601 Silicon Controlled Rectifier (SCR) by Texas Instruments and experience unparalleled quality and reliability. With a maximum DC Gate Trigger Current of 10 mA and a Non Repetitive Peak On-state Current of 25 A, this SCR is ideal for a wide range of applications. From industrial to consumer electronics, the 2N1601 offers exceptional performance and durability. Trust in Texas Instruments' expertise and choose the 2N1601 for all your semiconductor needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10 mA

Having a high maximum DC gate trigger current allows for reliable and consistent triggering of the SCR, making this product suitable for a wide range of applications.

Non Repetitive Peak On-state Current: 25 A

With a high non-repetitive peak on-state current capability, this SCR can handle sudden surges in current without being damaged, making it a robust choice for high-power applications.

Maximum On-state Current: 3 A

The maximum on-state current rating of 3 A ensures that this SCR can handle moderate to high current loads with ease, making it suitable for a variety of industrial applications.

Maximum Leakage Current: 1 mA

The low maximum leakage current of 1 mA ensures minimal power loss when the SCR is in the off-state, leading to improved energy efficiency and performance.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SCR can operate reliably even in harsh environments with elevated temperatures, making it suitable for industrial applications where heat dissipation is a concern.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over the flow of current, making it a versatile choice for applications requiring controlled switching of electrical loads.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60 °C ensures that this SCR can function effectively even in extremely cold conditions, making it suitable for various applications in diverse environments.

Maximum DC Gate Trigger Voltage: 3 V

With a low maximum DC gate trigger voltage, this SCR can be easily triggered with minimal input voltage, making it a convenient choice for applications where precise triggering is required.

Repetitive Peak Off-state Voltage: 100 V

The repetitive peak off-state voltage rating of 100 V allows this SCR to block high voltages efficiently, making it suitable for applications where voltage regulation and isolation are important.

Maximum Holding Current: 25 mA

The high maximum holding current ensures that this SCR can stay in the on-state without requiring additional triggering current, making it a reliable choice for applications requiring sustained conduction.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1601 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

25 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

25 A

Maximum On-state Current:

3 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1601 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-988-8857, 5961009888857

NIIN

009888857

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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