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2N1603

Texas Instruments

2N1603 by Texas Instruments

2N1603 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 10mA, Non Repetitive Peak On-state Current of 25A, and Max On-state Current of 3A. It operates b/w -60°C to 125°C and has a Repetitive Peak Off-state Voltage of 300V. Ideal for power control applications.

Median Price

$12.920

Lifecycle Status

Suppliers In-Stock

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1k+

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DigiKey

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Freelance Electronics

USA . 2 parts In-Stock

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$3.287

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Ace Electronics

USA . 2 parts In-Stock

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Bristol Electronics

USA . 350 parts In-Stock

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$15.840

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$14.620

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American Microsemiconductor Inc.

USA . 8 parts In-Stock

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Vyrian

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Digiode

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ECAB

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Electronic Expediters

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Native Components

USA . 180 parts In-Stock

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$0.660

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Northwest PG Solutions

USA . 559 parts In-Stock

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$0.726

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Parana Technologies

USA . 2,172 parts In-Stock

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DigiPath Technology Company

USA . 950 parts In-Stock

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$3.802

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$3.498

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ChromeModa Solutions

Germany . 3,891 parts In-Stock

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$3.880

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IDEA Electronic Components Group

UK . 338 parts In-Stock

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$3.492

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Microchip USA

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Corphita

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Overview

Upgrade your electronics with the reliable 2N1603 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and performance. The 2N1603 is a Silicon Controlled Rectifier (SCR) that offers maximum DC Gate Trigger Current of 10 mA and Non Repetitive Peak On-state Current of 25 A. Perfect for a wide range of applications, this SCR provides exceptional value, efficiency, and durability. Trust Texas Instruments to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10 mA

Low gate trigger current allows for precise control of when the SCR turns on, improving efficiency and accuracy in applications.

Non Repetitive Peak On-state Current: 25 A

High peak on-state current capability makes this SCR suitable for handling transient overloads and surges without damage.

Maximum On-state Current: 3 A

With a maximum on-state current of 3 A, this SCR can reliably handle moderate to high current loads in various applications.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power dissipation when the SCR is in the off-state, leading to energy efficiency and reduced heat generation.

Maximum Operating Temperature: 125 °C

High operating temperature range allows the SCR to function in challenging environments without compromising performance or reliability.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over switching of power in AC circuits, making it suitable for a wide range of industrial and consumer applications.

Minimum Operating Temperature: -60 °C

Wide temperature range ensures the SCR can operate in cold environments without loss of functionality, making it versatile for various applications.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage requirement simplifies the control circuit design and reduces power consumption in the triggering mechanism.

Repetitive Peak Off-state Voltage: 300 V

High off-state voltage capability allows the SCR to withstand voltage spikes and surges, making it suitable for applications where voltage fluctuations are common.

Maximum Holding Current: 25 mA

The holding current rating ensures the SCR remains in the on-state after triggering, providing stability and reliability in continuous operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1603 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

25 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

25 A

Maximum On-state Current:

3 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1603 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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