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2N1604

Texas Instruments

2N1604 by Texas Instruments

2N1604 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 10mA, Non Repetitive Peak On-state Current of 25A, and Max On-state Current of 3A. It operates b/w -60°C to 125°C and has a Repetitive Peak Off-state Voltage of 400V. Ideal for power control applications in various industries.

Median Price

$34.000

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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DigiKey

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Bristol Electronics

USA . 289 parts In-Stock

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$15.840

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$14.620

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$12.989

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American Microsemiconductor Inc.

USA . 153 parts In-Stock

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TEDSS.com

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Vyrian

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Digiode

USA . 2,250 parts In-Stock

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DigiKey Marketplace

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Resion

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Electronic Expediters

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Native Components

USA . 994 parts In-Stock

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$0.061

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$0.058

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$0.061

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Parana Technologies

USA . 1,439 parts In-Stock

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$2.630

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$3.119

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DigiPath Technology Company

USA . 1,638 parts In-Stock

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$2.896

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$2.664

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ChromeModa Solutions

Germany . 5,132 parts In-Stock

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$2.955

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$2.423

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IDEA Electronic Components Group

UK . 1,854 parts In-Stock

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$2.955

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$2.660

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Microchip USA

USA . 8,862 parts In-Stock

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$21.468

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Corphita

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Northwest PG Solutions

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Overview

Unleash the power of the 2N1604 by Texas Instruments, a top-of-the-line Silicon Controlled Rectifier that delivers unmatched performance and reliability. With a maximum DC Gate Trigger Current of 10 mA and a Non Repetitive Peak On-state Current of 25 A, this SCR is perfect for a wide range of applications. From industrial machinery to home appliances, the 2N1604 offers exceptional value and benefits, making it the go-to choice for customers looking for quality and efficiency. Trust Texas Instruments to provide you with cutting-edge technology that meets your needs every time.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10 mA

The low gate trigger current ensures efficient operation and reliable performance of the SCR.

Non Repetitive Peak On-state Current: 25 A

The high peak on-state current capability allows the SCR to handle sudden surges of power without being damaged.

Maximum On-state Current: 3 A

The maximum on-state current of 3A enables the SCR to handle moderate power loads effectively.

Maximum Leakage Current: 1 mA

The low leakage current ensures minimal power wastage and improved efficiency of the SCR.

Maximum Operating Temperature: 125 °C

The high operating temperature range of 125°C allows the SCR to be used in a wide variety of industrial applications.

Trigger Device Type: SCR

Being an SCR, this device is ideal for applications requiring high current and voltage handling capabilities.

Minimum Operating Temperature: -60 °C

The low operating temperature limit of -60°C ensures reliable performance even in extreme cold environments.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage of 3V ensures that the SCR can be easily controlled with minimal input voltage.

Repetitive Peak Off-state Voltage: 400 V

The high off-state voltage capability of 400V allows the SCR to block high voltages effectively when in the off state.

Maximum Holding Current: 25 mA

The high holding current ensures that the SCR remains latched even after the trigger current is removed, providing stable operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1604 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

25 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

25 A

Maximum On-state Current:

3 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1604 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-958-5416, 5961009585416

NIIN

009585416

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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