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2N1597

Texas Instruments

2N1597 by Texas Instruments

2N1597 by Texas Instruments is a single SCR with 10mA DC gate trigger current, 15A non-repetitive peak on-state current, and 1.6A max on-state current. It is used in applications requiring high power control such as motor drives and industrial heating systems due to its robust design and reliable performance.

Median Price

$7.885

Lifecycle Status

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DigiKey Marketplace

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Bristol Electronics

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Vyrian

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Digiode

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Nova Conductors

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Tech-Mark Corp

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Electronic Expediters

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MISTER SPROCKETS

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ECAB

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Holdelec - ElecDif-Pro

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PUI

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LittleDiode

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Halfin

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Sinequanon

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Elcom Components

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ICP Electronique

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Microfarads

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Electronics Depot

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One Stop Electronics

USA . 849 parts In-Stock

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IDEA Electronic Components Group

UK . 400 parts In-Stock

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ChromeModa Solutions

Germany . 1,846 parts In-Stock

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$2.359

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$1.934

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DigiPath Technology Company

USA . 2,038 parts In-Stock

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MKK Technologies

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AZTECH Wire

Italy . 227 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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Microchip USA

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Argo Parts USA

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Continental Prestige Electronics

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Parana Technologies

USA . 1,478 parts In-Stock

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RTC Component Inc.

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Aranea Global

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Overview

Enhance your electronic projects with the high-quality 2N1597 by Texas Instruments! As a leading manufacturer in the industry, Texas Instruments guarantees top-notch performance and reliability. The 2N1597 belongs to the category of Silicon Controlled Rectifiers (SCR), making it ideal for a wide range of applications. From power supplies to motor controls, this versatile product offers value, benefits, and advantages that will exceed your expectations. Upgrade your designs with the 2N1597 today and experience the difference in quality and efficiency!

Feature Benefit Bullets

Package Body Material: METAL

Provides good thermal conductivity for efficient heat dissipation, ensuring reliable performance and extending the lifespan of the SCR.

Maximum DC Gate Trigger Current: 10 mA

Low gate trigger current allows for precise control over switching, making the SCR suitable for various applications requiring accurate triggering.

Configuration: SINGLE

Simplified single configuration makes the SCR easy to use and integrate into different circuit designs.

Maximum On-state Current: 1.6 A

Capable of handling relatively high on-state current, making it suitable for applications requiring reliable current carrying capacity.

Maximum Operating Temperature: 125 °C

Wide operating temperature range ensures the SCR can perform reliably in various environments without risk of overheating.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1597 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

10 us

Configuration:

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

3 V

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

6 mA

Non Repetitive Peak On-state Current:

15 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

1 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N1597 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-12-153-2303, 5961121532303, 5961-00-892-0988, 5961008920988, 5961-14-271-1935, 5961142711935

NIIN

121532303, 008920988, 142711935

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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