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2N1600

Texas Instruments

2N1600 by Texas Instruments

2N1600 by Texas Instruments is a Silicon Controlled Rectifier with 10mA DC Gate Trigger Current, 25A Non Repetitive Peak On-state Current, and 3A Max On-state Current. It operates b/w -60°C to 125°C and has a max leakage current of 1mA. Ideal for applications requiring precise current control in electronic circuits.

Median Price

$16.920

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 50 parts In-Stock

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Bristol Electronics

USA . 1,045 parts In-Stock

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$15.840

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$14.620

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$12.989

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1,045

$15.840

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$12.989

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TEDSS.com

USA . 5 parts In-Stock

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$18.000

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Vyrian

USA . 5,361 parts In-Stock

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PUI

USA . 1,333 parts In-Stock

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Digiode

USA . 218 parts In-Stock

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Electronic Expediters

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PAR Electronics

UK . 20 parts In-Stock

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R&J Components

USA . 12 parts In-Stock

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PC Components Company LLC

USA . 5 parts In-Stock

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DF Sales Co.

USA . 1 parts In-Stock

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DF Sales Co.

USA . 1 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 275 parts In-Stock

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$0.049

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$0.047

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$0.049

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$0.047

Parana Technologies

USA . 1,103 parts In-Stock

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$3.846

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$4.332

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$3.846

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DigiPath Technology Company

USA . 1,401 parts In-Stock

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$4.235

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$4.235

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ChromeModa Solutions

Germany . 2,229 parts In-Stock

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$4.321

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$3.543

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2,229

$4.321

$3.543

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IDEA Electronic Components Group

UK . 1,415 parts In-Stock

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$4.321

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$3.889

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$4.321

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Microchip USA

USA . 5,824 parts In-Stock

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$21.468

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$21.468

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Corphita

USA . 1,739 parts In-Stock

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Northwest PG Solutions

USA . 1,333 parts In-Stock

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Assy Fe

Spain . 25 parts In-Stock

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Overview

Unleash the power of the Texas Instruments 2N1600 Silicon Controlled Rectifier (SCR) for your electronic projects! With top-notch quality and reliability, this SCR offers a wide range of applications in power control circuits. Whether you're looking to regulate voltage or control current flow, the 2N1600 provides unmatched performance and efficiency. Trust Texas Instruments to deliver cutting-edge technology that exceeds your expectations. Upgrade to the 2N1600 today and experience the superior value and benefits it brings to your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10 mA

The low gate trigger current requirement allows for efficient and reliable triggering of the SCR, ensuring proper functioning during operation.

Non Repetitive Peak On-state Current: 25 A

The high peak on-state current capability makes this SCR suitable for handling high current applications without the risk of damaging the device.

Maximum On-state Current: 3 A

With a maximum on-state current of 3 A, this SCR can effectively handle moderate current loads, making it versatile for a range of applications.

Maximum Leakage Current: 1 mA

The low leakage current ensures minimal power loss and helps in maintaining efficiency of the device during standby or off-state conditions.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows this SCR to function effectively in a variety of environments, making it a durable choice for various industrial applications.

Trigger Device Type: SCR

Being an SCR, this device offers the capability of controlled switching of AC or DC power sources, making it suitable for applications requiring precise power control.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature allows this SCR to operate in cold climates or environments with low temperatures without any issues, increasing its versatility.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage requirement of 3 V makes this SCR easy to control and trigger, simplifying its integration into various electronic circuits.

Repetitive Peak Off-state Voltage: 50 V

The high repetitive peak off-state voltage rating of 50 V ensures that the SCR can withstand voltage spikes and transients, enhancing its reliability in harsh operating conditions.

Maximum Holding Current: 25 mA

The high holding current capability of 25 mA allows the SCR to remain latched in the on-state even after the trigger current is removed, ensuring stable operation in continuous conduction mode.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1600 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

25 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

25 A

Maximum On-state Current:

3 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1600 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-846-9459, 5961008469459, 5961-00-875-7925, 5961008757925

NIIN

008469459, 008757925

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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