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2N1776

Texas Instruments

2N1776 by Texas Instruments

2N1776 by Texas Instruments is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 60A Non Repetitive Peak On-state Current, and 4.7A Max On-state Current. It operates b/w -65°C to 125°C and has a max DC Gate Trigger Voltage of 1.5V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

$29.703

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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DigiKey

USA . 20 parts In-Stock

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Bristol Electronics

USA . 342 parts In-Stock

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$13.656

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$12.604

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$11.198

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342

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American Microsemiconductor Inc.

USA . 200 parts In-Stock

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$45.750

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Vyrian

USA . 8,360 parts In-Stock

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Digiode

USA . 5,633 parts In-Stock

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Anansix

USA . 2,151 parts In-Stock

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DigiKey Marketplace

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M&R Communications

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Manotoh

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Resion

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Corel Iberica Componentes, S.L.

Spain . 2 parts In-Stock

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Northwest PG Solutions

USA . 3,241 parts In-Stock

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$0.074

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$0.065

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$0.065

Native Components

USA . 510 parts In-Stock

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$0.546

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$0.546

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ChromeModa Solutions

Germany . 2,326 parts In-Stock

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$2.899

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$2.377

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IDEA Electronic Components Group

UK . 2,347 parts In-Stock

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$3.568

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$3.211

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DigiPath Technology Company

USA . 1,649 parts In-Stock

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$6.709

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MKK Technologies

India . 948 parts In-Stock

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$6.709

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Microchip USA

USA . 2,270 parts In-Stock

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$19.460

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Corphita

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Parana Technologies

USA . 3,084 parts In-Stock

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$4.266

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Assy Fe

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Overview

Elevate your electronics projects with the 2N1776 by Texas Instruments! As a trusted manufacturer of high-quality Silicon Controlled Rectifiers (SCR), Texas Instruments delivers top-notch performance and reliability. This versatile component offers a maximum DC Gate Trigger Current of 15 mA, providing ample power for a variety of applications. Whether you're working on industrial machinery or consumer electronics, the 2N1776 is sure to meet your needs with its impressive capabilities. Upgrade your designs today with the value and precision of Texas Instruments' 2N1776 SCR!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Having a high DC gate trigger current allows for reliable and consistent triggering of the SCR, making this product ideal for applications where precise control is needed.

Non Repetitive Peak On-state Current: 60 A

The high non-repetitive peak on-state current capability of this SCR allows it to handle sudden surges in current without damage, making it suitable for heavy-duty applications.

Maximum On-state Current: 4.7 A

With a maximum on-state current of 4.7 A, this SCR can handle moderate current loads effectively, making it versatile for various applications.

Maximum Leakage Current: 4 mA

The low maximum leakage current ensures minimal power loss when the SCR is in the off-state, making it energy-efficient and cost-effective.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows this SCR to operate in harsh environments with elevated temperatures, enhancing its durability and reliability.

Trigger Device Type: SCR

Being a silicon-controlled rectifier, this device offers precise control over the flow of current in a circuit, making it suitable for applications requiring controlled switching.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature enables this SCR to function in cold environments without any performance issues, increasing its usability in a wide range of conditions.

Maximum DC Gate Trigger Voltage: 1.5 V

The low DC gate trigger voltage requirement of 1.5 V ensures efficient triggering of the SCR, contributing to overall energy savings and improved system performance.

Repetitive Peak Off-state Voltage: 300 V

The repetitive peak off-state voltage rating of 300 V allows this SCR to withstand voltage surges without breakdown, making it reliable in high-voltage applications.

Maximum Holding Current: 50 mA

The high maximum holding current rating ensures that the SCR remains in the on-state even after the gate trigger signal is removed, providing stability in continuous operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1776 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

4 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1776 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-238-7873, 5961142387873, 5961-99-118-0851, 5961991180851, 5961-99-118-2951, 5961991182951

NIIN

142387873, 991180851, 991182951

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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