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2N1771A

Texas Instruments

2N1771A by Texas Instruments

2N1771A by Texas Instruments is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 60A Non Repetitive Peak On-state Current, and 4.7A Max On-state Current. It operates b/w -65 to 155°C and has a max DC Gate Trigger Voltage of 1.5V. Ideal for applications requiring precise current control in various temperature conditions.

Median Price

$11.632

Lifecycle Status

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17

In-Stock Inventory

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Freelance Electronics

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Bristol Electronics

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Vyrian

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Digiode

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Electronic Expediters

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M&R Communications

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ZD Integrated Circuits Inc.

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Manoshevitz Elec. Sales

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PUI

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Parana Technologies

USA . 2,349 parts In-Stock

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$2.045

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$2.568

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DigiPath Technology Company

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$2.252

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ChromeModa Solutions

Germany . 5,859 parts In-Stock

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$2.298

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$1.884

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IDEA Electronic Components Group

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$2.068

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AZTECH Wire

Italy . 360 parts In-Stock

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One Stop Electronics

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Glotronic Ltd.

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Northwest PG Solutions

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Native Components

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Perfect Parts

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RTC Component Inc.

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Overview

Experience the power of reliable performance with the 2N1771A from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and innovation. The 2N1771A is a Silicon Controlled Rectifier (SCR) that offers versatility and efficiency in various applications. With a maximum DC Gate Trigger Current of 15 mA and a Non Repetitive Peak On-state Current of 60 A, this SCR provides exceptional value and benefits to customers. Trust in Texas Instruments for superior products that exceed expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current allows for precise control over the SCR, making it suitable for applications requiring accurate switching.

Non Repetitive Peak On-state Current: 60 A

High peak on-state current capability ensures the SCR can handle surge currents effectively, making it ideal for applications with varying load demands.

Maximum On-state Current: 4.7 A

The SCR can handle moderate continuous currents without overheating, making it reliable for continuous operation in various electronic circuits.

Maximum Leakage Current: 9 mA

Low leakage current minimizes power loss and enhances efficiency, making the SCR energy-efficient and suitable for low-power consumption applications.

Maximum Operating Temperature: 155 °C

High maximum operating temperature ensures the SCR can withstand elevated temperatures without performance degradation, making it suitable for demanding industrial environments.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, the product offers reliable and stable switching performance, making it a preferred choice for applications requiring precise control over current flow.

Minimum Operating Temperature: -65 °C

Wide operating temperature range allows the SCR to function in extreme cold conditions, making it versatile for use in various temperature environments.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage requirement enables efficient control and triggering of the SCR, making it suitable for low-voltage applications and reducing power consumption.

Repetitive Peak Off-state Voltage: 50 V

The SCR can withstand high off-state voltage levels repeatedly, ensuring reliable performance in applications with voltage fluctuations.

Maximum Holding Current: 50 mA

High holding current capacity allows the SCR to stay in the on-state without continuous triggering, making it suitable for applications requiring sustained conduction.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1771A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

9 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1771A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-061-8603, 5961000618603, 5961-00-195-4094, 5961001954094, 5961-00-082-4006, 5961000824006, 5961-00-359-9071, 5961003599071, 5961-00-828-3137, 5961008283137, 5961-14-274-2879, 5961142742879

NIIN

000618603, 001954094, 000824006, 003599071, 008283137, 142742879

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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