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2N1778

Texas Instruments

2N1778 by Texas Instruments

The Texas Instruments 2N1778 is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 30mA, Non Repetitive Peak On-state Current of 60A, and Max On-state Current of 4.7A. It operates b/w -65°C to 125°C and has a Repetitive Peak Off-state Voltage of 500V. Ideal for power control applications requiring precise current regulation.

Median Price

$13.656

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Bristol Electronics

USA . 164 parts In-Stock

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$13.656

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$12.604

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$12.080

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Digiode

USA . 6,929 parts In-Stock

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Vyrian

USA . 4,728 parts In-Stock

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Anansix

USA . 1,250 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 128 parts In-Stock

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PUI

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ECAB

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ChromeModa Solutions

Germany . 6,016 parts In-Stock

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$2.463

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$2.020

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IDEA Electronic Components Group

UK . 2,258 parts In-Stock

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$4.563

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$4.107

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DigiPath Technology Company

USA . 3,422 parts In-Stock

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$8.581

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MKK Technologies

India . 1,937 parts In-Stock

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One Stop Electronics

USA . 1,193 parts In-Stock

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AZTECH Wire

Italy . 896 parts In-Stock

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$15.951

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Native Components

USA . 865 parts In-Stock

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$124.990

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$119.990

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Corphita

USA . 6,494 parts In-Stock

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Parana Technologies

USA . 3,558 parts In-Stock

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$5.456

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Northwest PG Solutions

USA . 3,411 parts In-Stock

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A-Plus Industry Inc.

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Assy Fe

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Overview

Discover the innovative 2N1778 by Texas Instruments, a high-quality Silicon Controlled Rectifier that exceeds industry standards. With a maximum DC Gate Trigger Current of 30 mA and a Non Repetitive Peak On-state Current of 60 A, this SCR offers reliable performance for a wide range of applications. Whether you're looking to enhance your power supply or control circuits, the 2N1778 provides exceptional value, efficiency, and versatility. Trust Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 30 mA

Having a high gate trigger current allows for precise control of the SCR, making it suitable for a wide range of applications.

Non Repetitive Peak On-state Current: 60 A

The high peak on-state current capability of 60 A ensures that the SCR can handle sudden surge currents without damage.

Maximum On-state Current: 4.7 A

With a maximum on-state current of 4.7 A, this SCR can safely carry a significant amount of current without overheating or failing.

Maximum Leakage Current: 1 mA

The low leakage current of 1 mA ensures that the SCR does not waste power when it is in the off state, improving overall efficiency.

Maximum Operating Temperature: 125 °C

The SCR can operate at high temperatures up to 125°C, making it suitable for industrial applications where heat resistance is important.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this device offers precise control over the switching of current, making it ideal for applications requiring accurate power regulation.

Minimum Operating Temperature: -65 °C

The SCR can also operate at extremely low temperatures down to -65°C, making it suitable for use in a wide range of environments.

Maximum DC Gate Trigger Voltage: 2 V

The low gate trigger voltage of 2 V ensures that the SCR can be easily turned on with a low voltage signal, making it versatile and easy to integrate into different circuits.

Repetitive Peak Off-state Voltage: 500 V

The high off-state voltage rating of 500 V allows the SCR to withstand high voltages in off state, making it suitable for applications where voltage spikes are common.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1778 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1778 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-946-2015, 5961009462015, 5961-00-469-9968, 5961004699968, 5961-01-012-6699, 5961010126699, 5961-14-341-4164, 5961143414164

NIIN

009462015, 004699968, 010126699, 143414164

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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