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2N1774A

Texas Instruments

2N1774A by Texas Instruments

2N1774A by Texas Instruments is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 60A Non Repetitive Peak On-state Current, and 4.7A Max On-state Current. It operates b/w -65°C to 155°C and has a max DC Gate Trigger Voltage of 1.5V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

$19.955

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

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TEDSS.com

USA . 2 parts In-Stock

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$16.000

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American Microsemiconductor Inc.

USA . 25 parts In-Stock

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$23.910

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Vyrian

USA . 3,481 parts In-Stock

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Digiode

USA . 2,418 parts In-Stock

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Bristol Electronics

USA . 439 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 18 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 16 parts In-Stock

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ECAB

Sweden . 15 parts In-Stock

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Electronic Expediters

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Electro Mavin

USA . 8 parts In-Stock

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Resion

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PUI

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Beltway Electronics Company

USA . 1 parts In-Stock

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MISTER SPROCKETS

USA . 1 parts In-Stock

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First Choice Components Inc.

USA . 1 parts In-Stock

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Native Components

USA . 384 parts In-Stock

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$0.057

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$0.055

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$0.055

Parana Technologies

USA . 2,220 parts In-Stock

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$3.311

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$3.834

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ChromeModa Solutions

Germany . 2,077 parts In-Stock

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$3.720

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$3.050

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$3.720

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IDEA Electronic Components Group

UK . 1,630 parts In-Stock

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$3.720

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$3.348

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AZTECH Wire

Italy . 870 parts In-Stock

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$12.037

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$12.037

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One Stop Electronics

USA . 731 parts In-Stock

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$19.100

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DigiPath Technology Company

USA . 2,311 parts In-Stock

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$3.354

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Corphita

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Northwest PG Solutions

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RTC Component Inc.

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Perfect Parts

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Overview

Unlock the power of reliable and efficient electronics with the 2N1774A by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees quality and durability in all their products. The 2N1774A falls under the category of Silicon Controlled Rectifiers (SCR), making it ideal for a wide range of applications. Experience seamless functionality and superior performance with this SCR, designed to provide maximum DC Gate Trigger Current of 15 mA and a Non Repetitive Peak On-state Current of 60 A. Trust Texas Instruments to deliver top-notch technology that exceeds expectations every time.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current allows for precise control over the SCR, making it suitable for applications requiring accurate triggering.

Non Repetitive Peak On-state Current: 60 A

High peak on-state current handling capability ensures the SCR can handle sudden surge currents effectively, making it reliable in high-power applications.

Maximum On-state Current: 4.7 A

The high on-state current rating allows the SCR to handle moderate to high current loads efficiently, making it versatile for various applications.

Maximum Leakage Current: 6 mA

Low leakage current ensures minimal power loss when the SCR is in the off state, contributing to overall energy efficiency in the system.

Maximum Operating Temperature: 155 °C

High operating temperature range allows the SCR to function reliably in harsh environments without the risk of overheating, increasing its overall durability.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this product offers precise control over switching operations, making it ideal for applications requiring controlled power delivery.

Repetitive Peak Off-state Voltage: 200 V

The high off-state voltage rating ensures the SCR can withstand voltage spikes or transients, enhancing its reliability in applications with varying voltage levels.

Maximum Holding Current: 50 mA

High holding current capability ensures the SCR remains in the on-state even in the absence of a gate signal, providing stability in applications where continuous conduction is required.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1774A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

6 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1774A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-828-8705, 5961008288705, 5961-00-994-7291, 5961009947291, 5961-14-230-8867, 5961142308867, 5961-15-053-6112, 5961150536112, 5961-21-803-8649, 5961218038649

NIIN

008288705, 009947291, 142308867, 150536112, 218038649

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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