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2N1777A

Texas Instruments

2N1777A by Texas Instruments

2N1777A by Texas Instruments is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 60A Non Repetitive Peak On-state Current, and 4.7A Max On-state Current. It operates b/w -65 to 155°C and has a max DC Gate Trigger Voltage of 1.5V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

$13.656

Lifecycle Status

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13

In-Stock Inventory

1k+

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Bristol Electronics

USA . 409 parts In-Stock

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$13.656

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$12.604

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$11.198

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Vyrian

USA . 7,505 parts In-Stock

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Digiode

USA . 1,432 parts In-Stock

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ACDS - Activité Composants Distribution Service

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ComSIT Distribution GmbH

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ComSIT USA

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Electronic Expediters

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ECAB

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Q Components

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LittleDiode

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Electro Mavin

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Electronics Depot

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Mil-Aero Solutions, Inc.

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Parana Technologies

USA . 942 parts In-Stock

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$3.904

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$4.379

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DigiPath Technology Company

USA . 2,367 parts In-Stock

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$4.299

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$3.955

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IDEA Electronic Components Group

UK . 2,040 parts In-Stock

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$4.387

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$3.948

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ChromeModa Solutions

Germany . 10 parts In-Stock

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$4.387

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$3.597

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One Stop Electronics

USA . 1,630 parts In-Stock

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AZTECH Wire

Italy . 451 parts In-Stock

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Corphita

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Northwest PG Solutions

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RTC Component Inc.

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Overview

Unleash the power of innovation with the Texas Instruments 2N1777A SCR. Crafted with precision and quality, this device is designed to deliver reliable performance in a variety of applications. From industrial machinery to consumer electronics, the 2N1777A offers unparalleled efficiency and durability. Trust in Texas Instruments for cutting-edge technology that exceeds expectations. Elevate your projects with the 2N1777A and experience the difference of superior engineering.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current requirement allows for efficient and precise control of the SCR, leading to better performance and reliability.

Non Repetitive Peak On-state Current: 60 A

High peak on-state current capability ensures the SCR can handle sudden high current spikes without getting damaged, making it suitable for demanding applications.

Maximum On-state Current: 4.7 A

The high maximum on-state current rating allows the SCR to handle continuous currents without overheating, increasing its durability and longevity.

Maximum Leakage Current: 2 mA

Low leakage current helps in reducing power dissipation and improving efficiency of the SCR, making it suitable for energy-efficient applications.

Maximum Operating Temperature: 155 °C

Wide operating temperature range ensures the SCR can operate reliably in varying environmental conditions, enhancing its versatility and usability.

Trigger Device Type: SCR

Being an SCR, the product offers precise and reliable control over the switching of currents, making it ideal for applications requiring accurate power switching.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage requirement enables easy interfacing with control circuits, simplifying the overall system design and integration process.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating ensures the SCR can withstand high voltage requirements, making it suitable for applications needing robust voltage handling capabilities.

Maximum Holding Current: 50 mA

High holding current capability allows the SCR to remain in the on-state even after the gate signal is removed, providing a stable and reliable operation in continuous switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1777A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1777A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-814-2677, 5961008142677

NIIN

008142677

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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