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2N1773

Texas Instruments

2N1773 by Texas Instruments

2N1773 by Texas Instruments is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 60A Non Repetitive Peak On-state Current, and 4.7A Max On-state Current. It operates b/w -65°C to 125°C and has a max DC Gate Trigger Voltage of 1.5V. Ideal for applications requiring precise current control in various electronic circuits.

Median Price

$13.656

Lifecycle Status

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7

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1k+

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DigiKey

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Bristol Electronics

USA . 350 parts In-Stock

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$12.604

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Vyrian

USA . 8,997 parts In-Stock

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ChromeModa Solutions

Germany . 3,032 parts In-Stock

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$2.346

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$1.924

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IDEA Electronic Components Group

UK . 1,217 parts In-Stock

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DigiPath Technology Company

USA . 3,943 parts In-Stock

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$4.529

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MKK Technologies

India . 2,371 parts In-Stock

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Northwest PG Solutions

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Native Components

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Microchip USA

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Parana Technologies

USA . 1,756 parts In-Stock

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Corphita

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Overview

Unlock the power of efficiency with the Texas Instruments 2N1773 Silicon Controlled Rectifier. Designed for high performance and reliability, this SCR offers customers a durable solution for a wide range of applications. Whether you're looking to enhance industrial automation or elevate power control systems, the 2N1773 delivers unparalleled value and benefits. Trust in Texas Instruments, known for their superior quality and innovation, to provide you with the tools you need to succeed. Choose the 2N1773 and experience the difference today.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current allows for efficient and precise control of the SCR, making it ideal for applications requiring precise switching.

Non Repetitive Peak On-state Current: 60 A

High peak on-state current capability allows the SCR to handle short-term high current surges effectively, suitable for applications with occasional peak loads.

Maximum On-state Current: 4.7 A

The SCR can handle sustained on-state current of up to 4.7A, making it suitable for medium power applications.

Maximum Leakage Current: 8 mA

Low leakage current ensures minimal power wastage when the SCR is in the off-state, improving overall efficiency.

Maximum Operating Temperature: 125 °C

With a high operating temperature range of up to 125°C, this SCR can be used in a wide variety of challenging environments without the risk of overheating.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers reliable and stable performance in controlling current flow in different circuits.

Minimum Operating Temperature: -65 °C

Ability to operate in extremely low temperatures down to -65°C makes this SCR suitable for use in cold environments or where temperature variations are significant.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage requirement of 1.5V enables easy interfacing with control circuits, enhancing the overall control capabilities of the system.

Repetitive Peak Off-state Voltage: 150 V

This SCR can withstand repetitive high off-state voltages of up to 150V, making it reliable and durable for long-term use.

Maximum Holding Current: 50 mA

The SCR can maintain a holding current of up to 50 mA, ensuring stable operation in applications where continuous current flow is required.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1773 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

8 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

150 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1773 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-380-7025, 5961143807025

NIIN

143807025

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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