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2N885

Texas Instruments

2N885 by Texas Instruments

The Texas Instruments 2N885 is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.02 mA, Non Repetitive Peak On-state Current of 20 A, and Max On-state Current of 0.35 A. It operates b/w -60 to 100 °C and has a Repetitive Peak Off-state Voltage of 30 V. Ideal for applications requiring precise current control in electronic circuits.

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9

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Vyrian

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Digiode

USA . 4,280 parts In-Stock

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Electronic Expediters

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EMSNET

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Bristol Electronics

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Atlantic Semiconductor

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Native Components

USA . 12 parts In-Stock

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Northwest PG Solutions

USA . 2,013 parts In-Stock

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Parana Technologies

USA . 1,665 parts In-Stock

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DigiPath Technology Company

USA . 306 parts In-Stock

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ChromeModa Solutions

Germany . 1,670 parts In-Stock

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IDEA Electronic Components Group

UK . 1,622 parts In-Stock

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AZTECH Wire

Italy . 743 parts In-Stock

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One Stop Electronics

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Glotronic Ltd.

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Supply Digital

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Overview

Discover the 2N885 by Texas Instruments, a top-notch Silicon Controlled Rectifier that offers unparalleled quality and reliability. With a maximum DC Gate Trigger Current of 0.02 mA and a Non Repetitive Peak On-state Current of 20 A, this SCR is perfect for a variety of applications. From industrial machinery to power supplies, the 2N885 delivers exceptional performance, ensuring smooth operations and enhanced efficiency. Trust in Texas Instruments' expertise and invest in the 2N885 for superior results that exceed expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.02 mA

This low trigger current ensures efficient operation and enhances the reliability of the SCR.

Non Repetitive Peak On-state Current: 20 A

The high peak on-state current capability allows the SCR to handle sudden surges in current without any issues, making it suitable for demanding applications.

Maximum On-state Current: 0.35 A

With a high maximum on-state current rating, this SCR can handle continuous current flow without overheating or breaking down.

Maximum Leakage Current: 0.02 mA

The low leakage current ensures that the SCR does not consume excessive power when in an off state, making it energy-efficient.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature allows the SCR to function reliably in harsh environmental conditions.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device provides precise control over current flow, making it a reliable choice for various applications.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature ensures that the SCR can function effectively even in extremely cold environments.

Maximum DC Gate Trigger Voltage: 0.6 V

The low gate trigger voltage requirement makes it easy to control the SCR, enhancing its operational efficiency.

Repetitive Peak Off-state Voltage: 30 V

The SCR can withstand high off-state voltages repeatedly, making it suitable for applications where voltage spikes are common.

Maximum Holding Current: 1 mA

The SCR can maintain a stable on-state current level without requiring excessive power, ensuring efficient operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N885 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.02 mA

Maximum DC Gate Trigger Voltage:

.6 V

Maximum Holding Current:

1 mA

Maximum Leakage Current:

.02 mA

Non Repetitive Peak On-state Current:

20 A

Maximum On-state Current:

.35 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

30 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N885 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-988-5133, 5961009885133

NIIN

009885133

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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