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2N884

Texas Instruments

2N884 by Texas Instruments

2N884 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.02 mA, Non Repetitive Peak On-state Current of 20 A, and Max On-state Current of 0.35 A. It operates b/w -60 to 100 °C and is ideal for applications requiring SCR trigger devices with low leakage current and high holding current capabilities.

Median Price

$9.680

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 80 parts In-Stock

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$9.680

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80

$9.680

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Vyrian

USA . 8,038 parts In-Stock

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8,038

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Digiode

USA . 2,533 parts In-Stock

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2,533

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Component Electronics Inc.

Canada . 14 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 5 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,735 parts In-Stock

1+ parts

$1.884

100+ parts

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$2.428

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1,735

$1.884

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$2.428

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Native Components

USA . 11 parts In-Stock

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$2.058

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11

$2.058

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DigiPath Technology Company

USA . 940 parts In-Stock

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$2.075

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$1.909

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940

$2.075

$1.909

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IDEA Electronic Components Group

UK . 2,158 parts In-Stock

1+ parts

$2.117

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$1.905

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$2.117

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$1.905

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ChromeModa Solutions

Germany . 946 parts In-Stock

1+ parts

$2.117

100+ parts

$1.736

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946

$2.117

$1.736

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Northwest PG Solutions

USA . 612 parts In-Stock

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$2.263

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612

$2.263

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One Stop Electronics

USA . 188 parts In-Stock

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$6.100

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188

$6.100

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AZTECH Wire

Italy . 552 parts In-Stock

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$8.794

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552

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Corphita

USA . 2,999 parts In-Stock

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2,999

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Supply Digital

USA . 2,070 parts In-Stock

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Assy Fe

Spain . 5 parts In-Stock

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RTC Component Inc.

USA . 2 parts In-Stock

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Overview

Elevate your electronics projects with the 2N884 by Texas Instruments, a top-of-the-line Silicon Controlled Rectifier that boasts unmatched quality and reliability. Ideal for a wide range of applications, this SCR offers unparalleled performance and efficiency. Whether you're a seasoned professional or a hobbyist looking to take your creations to the next level, the 2N884 is sure to exceed your expectations. Trust in Texas Instruments for cutting-edge technology that delivers results.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.02 mA

Low gate trigger current ensures efficient and precise control of the SCR, making it suitable for a wide range of applications.

Non Repetitive Peak On-state Current: 20 A

High peak on-state current allows the SCR to handle heavy loads and sudden surges, making it reliable in demanding environments.

Maximum On-state Current: 0.35 A

With a high maximum on-state current rating, this SCR can effectively manage moderate to high power applications without overheating.

Maximum Leakage Current: 0.02 mA

Low leakage current ensures that the SCR maintains its off-state condition when not in use, enhancing energy efficiency and preventing unintentional activation.

Maximum Operating Temperature: 100 °C

Wide operating temperature range allows the SCR to function reliably in varying environmental conditions, enhancing its versatility.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this product offers precise control over the flow of current, making it ideal for applications that require efficient power regulation.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature ensures that the SCR can function even in extremely cold environments, making it suitable for a wide range of industrial applications.

Maximum DC Gate Trigger Voltage: 0.6 V

Low gate trigger voltage allows for efficient activation of the SCR, minimizing power loss and enhancing overall performance.

Repetitive Peak Off-state Voltage: 15 V

High off-state voltage rating ensures that the SCR can withstand voltage spikes and fluctuations, making it durable and reliable in various operating conditions.

Maximum Holding Current: 1 mA

The high holding current ensures that the SCR remains in the on-state once triggered, providing stable operation and preventing unintentional deactivation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N884 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.02 mA

Maximum DC Gate Trigger Voltage:

.6 V

Maximum Holding Current:

1 mA

Maximum Leakage Current:

.02 mA

Non Repetitive Peak On-state Current:

20 A

Maximum On-state Current:

.35 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

15 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N884 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4330-01-289-2424, 4330012892424, 5961-00-919-9191, 5961009199191

NIIN

012892424, 009199191

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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