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2N889

Texas Instruments

2N889 by Texas Instruments

2N889 by Texas Instruments is a Silicon Controlled Rectifier with max on-state current of 0.35A, trigger voltage of 0.6V, and off-state voltage of 200V. It is used in applications requiring precise gate triggering and high current handling capabilities up to 20A. Operating temperature ranges from -60°C to 100°C make it suitable for various industrial environments.

Median Price

$7.560

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Freelance Electronics

USA . 2 parts In-Stock

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$4.130

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TEDSS.com

USA . 24 parts In-Stock

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$10.990

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Vyrian

USA . 7,756 parts In-Stock

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Digiode

USA . 4,343 parts In-Stock

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Electronic Expediters

USA . 75 parts In-Stock

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Resion

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Mil-Aero Solutions, Inc.

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Parana Technologies

USA . 805 parts In-Stock

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$1.876

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$2.420

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805

$1.876

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$2.420

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DigiPath Technology Company

USA . 13 parts In-Stock

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$2.066

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ChromeModa Solutions

Germany . 2,722 parts In-Stock

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$2.108

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$1.729

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IDEA Electronic Components Group

UK . 1,909 parts In-Stock

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$1.897

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One Stop Electronics

USA . 1,258 parts In-Stock

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$13.100

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AZTECH Wire

Italy . 597 parts In-Stock

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$15.044

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Native Components

USA . 800 parts In-Stock

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$45.040

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$43.238

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Northwest PG Solutions

USA . 1,879 parts In-Stock

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$49.544

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Corphita

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Glotronic Ltd.

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Supply Digital

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Overview

Unlock the power of Texas Instruments with the 2N889 Silicon Controlled Rectifier. This high-quality component offers reliability and efficiency for a wide range of applications. From industrial controls to power supplies, this SCR delivers performance and precision. Trust in Texas Instruments' reputation for excellence and experience the value and benefits of the 2N889 in your next project.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.02 mA

Low gate trigger current allows for precise control and efficient operation.

Non Repetitive Peak On-state Current: 20 A

Capable of handling high currents during peak operation without overheating or failure.

Maximum On-state Current: 0.35 A

Can handle moderate levels of continuous current flow.

Maximum Leakage Current: 0.02 mA

Low leakage current helps in maintaining efficiency and prevents unnecessary power loss.

Maximum Operating Temperature: 100 °C

Can operate effectively over a wide range of temperatures, ensuring reliability in various environments.

Trigger Device Type: SCR

SCR technology offers high reliability and robust performance in controlling current flow.

Minimum Operating Temperature: -60 °C

Capable of functioning in extremely low temperatures for versatile applications.

Maximum DC Gate Trigger Voltage: 0.6 V

Low gate trigger voltage ensures energy-efficient operation and reliable triggering.

Repetitive Peak Off-state Voltage: 200 V

Suitable for applications requiring high off-state voltage handling capability.

Maximum Holding Current: 1 mA

Provides stable holding current for continuous operation and reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N889 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.02 mA

Maximum DC Gate Trigger Voltage:

.6 V

Maximum Holding Current:

1 mA

Maximum Leakage Current:

.02 mA

Non Repetitive Peak On-state Current:

20 A

Maximum On-state Current:

.35 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N889 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-964-6810, 5961009646810, 5961-01-092-9739, 5961010929739

NIIN

009646810, 010929739

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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