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2N881

Texas Instruments

2N881 by Texas Instruments

2N881 by Texas Instruments is a Silicon Controlled Rectifier with 0.2 mA DC Gate Trigger Current, 20 A Non Repetitive Peak On-state Current, and 0.35 A Max On-state Current. It operates b/w -60 to 100 °C and has a max Off-state Voltage of 200 V. Ideal for power control applications requiring precise current regulation.

Median Price

$9.680

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 5 parts In-Stock

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$9.680

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5

$9.680

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Digiode

USA . 3,239 parts In-Stock

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3,239

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Vyrian

USA . 3,142 parts In-Stock

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3,142

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PUI

USA . 470 parts In-Stock

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470

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Electronic Expediters

USA . 27 parts In-Stock

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27

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 414 parts In-Stock

1+ parts

$0.465

100+ parts

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$0.446

414

$0.465

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$0.446

Northwest PG Solutions

USA . 617 parts In-Stock

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$0.512

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$0.451

617

$0.512

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$0.451

One Stop Electronics

USA . 154 parts In-Stock

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$1.100

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154

$1.100

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Parana Technologies

USA . 2,342 parts In-Stock

1+ parts

$4.188

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$4.629

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2,342

$4.188

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$4.629

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DigiPath Technology Company

USA . 119 parts In-Stock

1+ parts

$4.612

100+ parts

$4.243

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119

$4.612

$4.243

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IDEA Electronic Components Group

UK . 2,279 parts In-Stock

1+ parts

$4.706

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$4.235

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2,279

$4.706

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ChromeModa Solutions

Germany . 42 parts In-Stock

1+ parts

$4.706

100+ parts

$3.859

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42

$4.706

$3.859

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AZTECH Wire

Italy . 606 parts In-Stock

1+ parts

$7.714

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606

$7.714

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Corphita

USA . 4,366 parts In-Stock

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4,366

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Supply Digital

USA . 2,366 parts In-Stock

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2,366

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Overview

Unleash the power of the 2N881 by Texas Instruments, a top-of-the-line Silicon Controlled Rectifier (SCR) that guarantees superior performance and reliability. Manufactured by the industry leader in semiconductor technology, this SCR is an essential component for a wide range of applications. With its impressive maximum on-state current and low leakage current, the 2N881 offers unmatched value and benefits to customers looking for quality components that deliver outstanding results. Upgrade your projects with the 2N881 and experience the difference today!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient and reliable operation of the SCR.

Non Repetitive Peak On-state Current: 20 A

The high peak on-state current capability allows this SCR to handle heavy loads during short-duration peak events.

Maximum On-state Current: 0.35 A

With a maximum on-state current of 0.35 A, this SCR is suitable for medium-power applications where precise current control is needed.

Maximum Leakage Current: 0.1 mA

Low leakage current helps in reducing power losses and improving efficiency of the SCR.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature of 100°C, this SCR can withstand elevated temperatures in various applications.

Trigger Device Type: SCR

Being an SCR, this device offers robust and reliable switching capabilities for different electrical circuits.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature allows this SCR to function efficiently in cold environments.

Maximum DC Gate Trigger Voltage: 0.8 V

With a low gate trigger voltage, this SCR can be easily controlled and triggered using low-power signals.

Repetitive Peak Off-state Voltage: 200 V

The high repetitive peak off-state voltage rating makes this SCR suitable for applications where high voltage switching is required.

Maximum Holding Current: 5 mA

The maximum holding current of 5 mA ensures stable operation of the SCR in holding mode, preventing any unintentional turn-off.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N881 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

20 A

Maximum On-state Current:

.35 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N881 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-248-9677, 5961002489677

NIIN

002489677

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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