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2N5060G

Onsemi

2N5060G by Onsemi

2N5060G by Onsemi is a SCR with max. DC gate trigger current of 0.2 mA, non-repetitive peak on-state current of 10 A, and max. on-state current of 0.51 A. It is used in applications requiring reliable switching capabilities at temperatures ranging from -40 to 110°C.

Median Price

$0.099

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 75 parts In-Stock

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$0.099

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Vyrian

USA . 4,201 parts In-Stock

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4,201

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VNN

France . 716 parts In-Stock

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716

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Digiode

USA . 335 parts In-Stock

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335

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Pegasus Components GmbH

Germany . 172 parts In-Stock

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QIE Inc.

USA . 110 parts In-Stock

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110

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Distributors (Availability)

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Argo Parts USA

USA . 4,490 parts In-Stock

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$0.099

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$0.096

4,490

$0.099

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$0.096

Continental Prestige Electronics

USA . 2,236 parts In-Stock

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$0.099

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$0.097

2,236

$0.099

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$0.097

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.099

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$0.094

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$0.092

500

$0.099

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$0.094

$0.092

Ampacity Inc.

Singapore . 431 parts In-Stock

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$12.100

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431

$12.100

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AZTECH Wire

Italy . 285 parts In-Stock

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$12.361

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Perfect Parts

USA . 14,493 parts In-Stock

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Kulean Microsystems

USA . 7,578 parts In-Stock

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Problanco Electronics

Mexico . 6,490 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,479 parts In-Stock

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TANS Electronics

Latvia . 3,473 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Corphita

USA . 1,939 parts In-Stock

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SupplyDigital Components

Austria . 1,178 parts In-Stock

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Corohmni

South Africa . 455 parts In-Stock

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455

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UHIMA Technologies

Türkiye . 7 parts In-Stock

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Overview

Unlock the power of reliable and efficient performance with the 2N5060G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Silicon Controlled Rectifiers that are ideal for a wide range of applications. From industrial machinery to consumer electronics, this SCR offers unmatched value and benefits, ensuring optimal functionality and longevity. Trust Onsemi to provide innovative solutions that meet your needs and exceed your expectations. Choose the 2N5060G for superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SCR.

Maximum DC Gate Trigger Current: 0.2 mA

Allows for precise control and triggering of the SCR.

Configuration: SINGLE

Simplified design and easy integration into existing circuits.

Non Repetitive Peak On-state Current: 10 A

Capable of handling high current surges without damage.

Maximum On-state Current: 0.51 A

Suitable for various low to medium power applications.

Repetitive Peak Reverse Voltage: 30 V

Designed to withstand reverse voltage spikes.

Maximum Operating Temperature: 110 °C

Can operate in high-temperature environments without performance degradation.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold conditions.

Maximum RMS On-state Current: 0.8 A

Sufficient for handling continuous current flow in various applications.

Maximum DC Gate Trigger Voltage: 1.2 V

Low trigger voltage requirement for efficient control.

Repetitive Peak Off-state Voltage: 30 V

Designed to withstand off-state voltage spikes repeatedly.

Maximum Holding Current: 10 mA

Maintains SCR in the on-state without external control.

Nominal Circuit Commutated Turn-off Time: 10 us

Quick turn-off time for efficient operation in switching applications.

Peak Reflow Temperature: 260 °C

Suitable for reflow soldering processes during assembly.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N5060G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

10 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.51 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

30 V

Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N5060G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-460-0815, 5961004600815

NIIN

004600815

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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