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2N5061

Texas Instruments

2N5061 by Texas Instruments

2N5061 by Texas Instruments is a single SCR with max DC gate trigger current of 0.2mA and non-repetitive peak on-state current of 10A. It is used in applications requiring a max RMS on-state current of 0.8A, such as power control circuits for up to 60V repetitive peak reverse voltage.

Median Price

$0.600

Lifecycle Status

Suppliers In-Stock

39

In-Stock Inventory

1k+

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DigiKey

USA . 1,714 parts In-Stock

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$0.600

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1,714

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DF Sales Co.

USA . 575 parts In-Stock

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DF Sales Co.

USA . 575 parts In-Stock

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Digiode

USA . 3,006 parts In-Stock

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Component Electronics Inc.

Canada . 1,266 parts In-Stock

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Freelance Electronics

USA . 4,919 parts In-Stock

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American Microsemiconductor Inc.

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Lakeview Electronics

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PC Components Company LLC

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Bristol Electronics

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ABC Electronics Ltd.

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ComSIT Distribution GmbH

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Vyrian

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Electronic Expediters

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Pride Electronics

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Jameco Electronics

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First Choice Components Inc.

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LIBRA Elektronik GmbH

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Holdelec - ElecDif-Pro

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LittleDiode

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Pegasus Components GmbH

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Elcom Components

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Tech-Mark Corp

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MISTER SPROCKETS

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Digital Electronic Gebert Verwaltungs UG

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ICP Electronique

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Manoshevitz Elec. Sales

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Sunrise Surplus Inc.

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EMSNET

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Standard Data Resources

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MRC Electronics

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Rebound Electronics

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GES GmbH

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ECAB

Sweden . 2 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 119 parts In-Stock

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$0.193

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Corphita

USA . 3,680 parts In-Stock

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$0.540

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Parana Technologies

USA . 1,221 parts In-Stock

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$3.182

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$295.474

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$2.864

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DigiPath Technology Company

USA . 74 parts In-Stock

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$3.504

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$3.223

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IDEA Electronic Components Group

UK . 1,537 parts In-Stock

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$3.575

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$3.218

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ChromeModa Solutions

Germany . 668 parts In-Stock

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$3.575

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$2.932

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Northwest PG Solutions

USA . 5,027 parts In-Stock

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$99.690

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Native Components

USA . 833 parts In-Stock

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$215.307

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$206.695

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Infinite Electronics LLP (Excess)

. 55,256 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Problanco Electronics

Mexico . 7,081 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 7,072 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,763 parts In-Stock

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Glotronic Ltd.

UK . 4,707 parts In-Stock

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TANS Electronics

Latvia . 4,341 parts In-Stock

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Kepictronics

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Assy Fe

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Lixinc

USA . 1,035 parts In-Stock

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UHIMA Technologies

Türkiye . 290 parts In-Stock

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Overview

Looking for a reliable Silicon Controlled Rectifier that delivers top-notch performance? Look no further than the 2N5061 by Texas Instruments. With a maximum DC gate trigger current of 0.2 mA and a non-repetitive peak on-state current of 10 A, this SCR is perfect for a wide range of applications. Whether you need it for power supplies, motor control, or lighting systems, the 2N5061 offers unmatched quality and durability. Trust Texas Instruments to provide you with the best in semiconductor technology, and experience the value and benefits that this product brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the SCR, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Current: 0.2 mA

The low maximum DC gate trigger current ensures efficient and precise triggering of the SCR, leading to reliable performance in control applications.

Configuration: SINGLE

The single configuration simplifies the setup and installation of the SCR, making it user-friendly and easier to integrate into circuits.

Repetitive Peak On-state Current: 10 A

The high repetitive peak on-state current rating allows the SCR to handle high current loads effectively, making it suitable for power control applications.

Maximum On-state Current: 0.51 A

The low maximum on-state current ensures efficient operation and helps prevent overheating, enhancing the longevity of the SCR.

Maximum Leakage Current: 0.01 mA

The low maximum leakage current minimizes power loss and improves the efficiency of the SCR in standby or off-state conditions.

Repetitive Peak Reverse Voltage: 60 V

The repetitive peak reverse voltage rating ensures reliable and safe operation of the SCR when subjected to varying reverse voltage conditions.

Maximum RMS On-state Current: 0.8 A

The maximum RMS on-state current rating indicates the SCR's ability to handle alternating current loads efficiently, making it suitable for AC power control applications.

Maximum DC Gate Trigger Voltage: 0.8 V

The low maximum DC gate trigger voltage ensures minimal power consumption during triggering, enhancing the overall energy efficiency of the SCR.

Repetitive Peak Off-state Voltage: 60 V

The repetitive peak off-state voltage rating ensures the SCR's ability to withstand reverse voltage conditions repeatedly without failure, enhancing its reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N5061 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

10 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.51 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

60 V

Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N5061 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-517-9224, 5961005179224, 5961-00-391-5636, 5961003915636, 5961-01-623-0420, 5961016230420, 5961-99-651-8575, 5961996518575

NIIN

005179224, 003915636, 016230420, 996518575

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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