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TIC39A

Texas Instruments

TIC39A by Texas Instruments

TIC39A by Texas Instruments is a single SCR with a max on-state current of 2A and non-repetitive peak on-state current of 20A. It has a trigger voltage of 1V and is ideal for applications requiring high power control in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,397 parts In-Stock

1+ parts

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5,397

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Digiode

USA . 1,190 parts In-Stock

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1,190

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Distributors (Availability)

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Parana Technologies

USA . 1,673 parts In-Stock

1+ parts

$2.319

100+ parts

-

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$2.816

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1,673

$2.319

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$2.816

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DigiPath Technology Company

USA . 1,494 parts In-Stock

1+ parts

$2.554

100+ parts

$2.350

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1,494

$2.554

$2.350

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ChromeModa Solutions

Germany . 4,994 parts In-Stock

1+ parts

$2.606

100+ parts

$2.137

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4,994

$2.606

$2.137

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IDEA Electronic Components Group

UK . 1,203 parts In-Stock

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$2.606

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$2.345

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1,203

$2.606

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$2.345

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AZTECH Wire

Italy . 313 parts In-Stock

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$5.749

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313

$5.749

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One Stop Electronics

USA . 433 parts In-Stock

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$13.100

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433

$13.100

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Semicontronic

India . 1,291 parts In-Stock

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$23.100

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$22.522

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$22.407

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1,291

$23.100

$22.522

$22.407

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Corphita

USA . 3,337 parts In-Stock

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3,337

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Corohmni

South Africa . 221 parts In-Stock

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Overview

Enhance your electronic designs with the TIC39A by Texas Instruments, a high-quality Silicon Controlled Rectifier perfect for a variety of applications. With its durable metal package body and reliable single configuration, this SCR offers a maximum on-state current of 2 A and a non-repetitive peak on-state current of 20 A. From industrial machinery to household appliances, the TIC39A provides exceptional performance, precise control, and unmatched reliability. Elevate your projects with the trusted manufacturer, Texas Instruments, and experience the value and benefits that this cutting-edge product brings to your designs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity and mechanical strength, ensuring reliable performance and durability.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise control and efficient triggering of the SCR.

Configuration: SINGLE

Single configuration simplifies the circuit design and integration of the SCR into various electronic systems.

Non Repetitive Peak On-state Current: 20 A

High peak on-state current capacity makes the SCR suitable for handling heavy loads and high power applications.

Terminal Form: WIRE

Wire terminals provide easy and secure connections, enhancing the overall usability of the SCR.

Maximum On-state Current: 2 A

High on-state current rating allows the SCR to handle moderate power requirements effectively.

Repetitive Peak Reverse Voltage: 100 V

High reverse voltage rating ensures reliable operation and protection against reverse polarity voltage spikes.

Maximum Operating Temperature: 140 °C

Wide operating temperature range enables the SCR to function in various thermal conditions without compromising its performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC39A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

5 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2 A

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC39A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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