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TIC39B

Texas Instruments

TIC39B by Texas Instruments

TIC39B by Texas Instruments is a single SCR with max on-state current of 2A and trigger voltage of 1V. It has a non-repetitive peak on-state current of 20A, making it suitable for applications requiring high power control in industrial settings. With a package style of cylindrical and max operating temperature of 140°C, it is ideal for use in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,552 parts In-Stock

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Digiode

USA . 2,869 parts In-Stock

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2,869

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Distributors (Availability)

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Parana Technologies

USA . 658 parts In-Stock

1+ parts

$4.203

100+ parts

-

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$4.639

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658

$4.203

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$4.639

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DigiPath Technology Company

USA . 344 parts In-Stock

1+ parts

$4.628

100+ parts

$4.257

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344

$4.628

$4.257

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ChromeModa Solutions

Germany . 5,277 parts In-Stock

1+ parts

$4.722

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$3.872

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5,277

$4.722

$3.872

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IDEA Electronic Components Group

UK . 1,050 parts In-Stock

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$4.722

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$4.250

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1,050

$4.722

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$4.250

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One Stop Electronics

USA . 1,610 parts In-Stock

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$8.100

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1,610

$8.100

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AZTECH Wire

Italy . 302 parts In-Stock

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$18.903

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302

$18.903

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Semicontronic

India . 1,286 parts In-Stock

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$24.100

100+ parts

$23.498

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$23.377

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1,286

$24.100

$23.498

$23.377

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Ampacity Inc.

Singapore . 423 parts In-Stock

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$30.100

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Corphita

USA . 800 parts In-Stock

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Corohmni

South Africa . 112 parts In-Stock

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Overview

Unleash the power of innovation with the TIC39B by Texas Instruments. Crafted with quality and precision, this Silicon Controlled Rectifier (SCR) offers unparalleled performance and reliability. Whether you're looking to control power in industrial equipment or enhance efficiency in home appliances, the TIC39B delivers exceptional value and benefits to customers. Trust Texas Instruments to provide cutting-edge technology that exceeds expectations and elevates your projects to new heights.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and robustness, making the SCR suitable for harsh industrial environments.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise control of the SCR, making it suitable for applications requiring low power consumption.

Configuration: SINGLE

Single configuration simplifies installation and maintenance of the SCR, reducing complexity in circuit design.

Repetitive Peak On-state Current: 20 A

High on-state current capability allows the SCR to handle heavy loads with ease, making it suitable for high-power applications.

Package Shape: ROUND

Round package shape ensures easy mounting and installation, saving space in the circuit layout.

Terminal Form: WIRE

Wire terminals provide secure connections, preventing accidental disconnection and ensuring reliable performance.

Maximum On-state Current: 2 A

High on-state current rating allows the SCR to handle moderate loads efficiently, making it versatile for various applications.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power loss and improved energy efficiency in the circuit.

Repetitive Peak Reverse Voltage: 200 V

High reverse voltage capability makes the SCR suitable for applications requiring reverse polarity protection.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections, allowing for versatile use in different configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers easy integration into existing systems, reducing the need for modifications in the layout.

Maximum Operating Temperature: 140 °C

High maximum operating temperature ensures reliable performance in various thermal conditions, increasing the SCR's robustness.

Trigger Device Type: SCR

SCR technology offers high reliability and fast switching capabilities, making it suitable for high-performance applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows the SCR to function in cold environments, offering versatility in temperature range.

Terminal Position: BOTTOM

Bottom terminal position allows for easy connection and disconnection, simplifying maintenance procedures.

Maximum RMS On-state Current: 2 A

High RMS on-state current rating indicates the SCR's ability to handle continuous current flow with minimal heating.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage requirement reduces the power consumption of the control circuit, enhancing energy efficiency.

Case Connection: ANODE

Anode case connection simplifies circuit design and ensures proper polarization, reducing the risk of errors in installation.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage capability allows the SCR to withstand voltage spikes and surges in the circuit.

Minimum Critical Rate of Rise of Off-state Voltage: 5 V/us

Fast rate of rise of off-state voltage ensures quick response to voltage fluctuations, enhancing the SCR's reliability in dynamic conditions.

Maximum Holding Current: 5 mA

High holding current ensures stable operation of the SCR at low current levels, preventing unintended turn-off and improving reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC39B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

5 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2 A

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC39B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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