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TIC39F

Texas Instruments

TIC39F by Texas Instruments

TIC39F by Texas Instruments is a single SCR with max. on-state current of 2A and non-repetitive peak current of 20A. It has a trigger voltage of 1V, making it suitable for applications requiring precise gate control in circuits with low power requirements. The package style is cylindrical, ideal for compact designs where space is limited.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,563 parts In-Stock

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Digiode

USA . 889 parts In-Stock

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889

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Parana Technologies

USA . 577 parts In-Stock

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$2.494

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-

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$2.984

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577

$2.494

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$2.984

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DigiPath Technology Company

USA . 372 parts In-Stock

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$2.746

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372

$2.746

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ChromeModa Solutions

Germany . 5,943 parts In-Stock

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$2.802

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$2.298

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IDEA Electronic Components Group

UK . 2,115 parts In-Stock

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$2.802

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$2.522

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$2.802

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AZTECH Wire

Italy . 591 parts In-Stock

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$7.681

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$7.681

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Semicontronic

India . 1,510 parts In-Stock

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$8.100

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$7.898

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$7.857

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$8.100

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One Stop Electronics

USA . 1,538 parts In-Stock

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$12.100

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Ampacity Inc.

Singapore . 721 parts In-Stock

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$29.100

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Corphita

USA . 546 parts In-Stock

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Corohmni

South Africa . 199 parts In-Stock

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Overview

Unlock the power of precision and reliability with the TIC39F by Texas Instruments. As a leading manufacturer in semiconductor technology, Texas Instruments delivers superior quality and performance in the Silicon Controlled Rectifiers (SCR) category. Designed for efficiency and durability, this product offers customers unmatched value and benefits for a wide range of applications. Experience seamless operation and enhanced productivity with the TIC39F, setting new standards in performance and innovation.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides better heat dissipation and mechanical strength, making the SCR more reliable and durable.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient and precise control over turning the SCR on and off.

Configuration: SINGLE

Single configuration simplifies the setup and operation of the SCR, making it easy to integrate into circuits.

Non Repetitive Peak On-state Current: 20 A

High peak on-state current allows the SCR to handle large surge currents without failure, making it suitable for high-power applications.

Package Shape: ROUND

Round package shape makes it easy to mount and connect the SCR in various applications with standardized mounting options.

Terminal Form: WIRE

Wire terminals ensure secure connections and easy installation of the SCR in circuits, reducing the risk of loose connections.

Maximum On-state Current: 2 A

High on-state current rating allows the SCR to handle continuous currents efficiently without overheating, ensuring reliable performance.

Maximum Leakage Current: 1 mA

Low leakage current minimizes power loss and improves the efficiency of the SCR, making it suitable for low-power applications.

Repetitive Peak Reverse Voltage: 50 V

High reverse voltage rating enables the SCR to withstand voltage spikes and reverse polarity conditions, enhancing its reliability.

No. of Terminals: 3

Three terminals provide easy connectivity in circuits and enable proper gate triggering, ensuring smooth operation of the SCR.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides compact and space-efficient design, allowing for easy integration in tight spaces.

Maximum Operating Temperature: 140 °C

High maximum operating temperature range allows the SCR to operate in harsh environments without compromising performance.

Trigger Device Type: SCR

SCR technology offers precise control over the switching operation, making it suitable for various industrial and electronic applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the SCR can operate in extreme cold conditions without performance degradation.

Terminal Position: BOTTOM

Bottom terminal position simplifies the installation and connection of the SCR in circuits, ensuring proper functionality.

Maximum RMS On-state Current: 2 A

High RMS on-state current rating allows the SCR to handle AC currents efficiently without overheating, ensuring reliable operation in AC circuits.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage ensures precise and efficient control over turning the SCR on and off, improving overall performance.

Case Connection: ANODE

Anode case connection simplifies the circuit design and enhances the overall reliability of the SCR, ensuring proper operation.

Repetitive Peak Off-state Voltage: 50 V

High repetitive peak off-state voltage rating allows the SCR to withstand voltage spikes and reverse polarity conditions, ensuring long-term reliability.

Minimum Critical Rate of Rise of Off-state Voltage: 5 V/us

Low critical rate of rise of off-state voltage ensures stability and reliability in high-voltage applications, preventing voltage breakdown.

Maximum Holding Current: 5 mA

High holding current ensures the SCR stays in the on-state during normal operation, preventing false triggering and ensuring proper functionality.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC39F attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

5 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2 A

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

50 V

Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC39F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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