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TIC35

Texas Instruments

TIC35 by Texas Instruments

TIC35 by Texas Instruments is a single SCR with a max on-state current of 0.4A and DC gate trigger current of 0.02mA, suitable for applications requiring precise power control in circuits. With a package style of cylindrical metal body, it operates b/w -55 to 125 °C and has a repetitive peak off-state voltage of 15V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,181 parts In-Stock

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Digiode

USA . 1,156 parts In-Stock

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1,156

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Distributors (Availability)

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Parana Technologies

USA . 488 parts In-Stock

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$2.509

100+ parts

-

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$2.997

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488

$2.509

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$2.997

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ChromeModa Solutions

Germany . 1,926 parts In-Stock

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$2.819

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$2.312

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1,926

$2.819

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IDEA Electronic Components Group

UK . 988 parts In-Stock

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$2.819

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$2.537

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988

$2.819

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One Stop Electronics

USA . 283 parts In-Stock

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$9.100

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283

$9.100

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Semicontronic

India . 1,312 parts In-Stock

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$14.100

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$13.748

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$13.677

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1,312

$14.100

$13.748

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AZTECH Wire

Italy . 290 parts In-Stock

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$15.553

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290

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Ampacity Inc.

Singapore . 747 parts In-Stock

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$21.100

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DigiPath Technology Company

USA . 1,359 parts In-Stock

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$2.542

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$2.542

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Corphita

USA . 332 parts In-Stock

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Corohmni

South Africa . 85 parts In-Stock

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Overview

Unlock the power of precision with the TIC35 by Texas Instruments. Crafted with top-quality materials and cutting-edge technology, this Silicon Controlled Rectifier (SCR) offers unparalleled performance in a variety of applications. With a maximum DC Gate Trigger Current of 0.02 mA and a Non-Repetitive Peak On-state Current of 3 A, this product delivers reliability and efficiency like no other. Whether you're in the automotive, industrial, or consumer electronics industry, the TIC35 guarantees seamless operation and exceptional results. Elevate your projects with the TIC35 today.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material ensures durability and efficient heat dissipation, making this product reliable in various applications.

Maximum DC Gate Trigger Current: 0.02 mA

The low gate trigger current allows for precise and efficient control of the SCR, making it suitable for applications requiring accurate triggering.

Configuration: SINGLE

The single configuration simplifies installation and wiring, making it easy to integrate this SCR into existing systems.

Non Repetitive Peak On-state Current: 3 A

With a high non-repetitive peak on-state current, this SCR can handle short-term high-current surges without compromising performance.

Package Shape: ROUND

The round package shape allows for easy mounting and installation, making it a versatile choice for a variety of applications.

Terminal Form: WIRE

The wire terminal form offers reliable connection and easy integration into different circuit configurations.

Maximum On-state Current: 0.4 A

The maximum on-state current of 0.4 A ensures efficient power handling capability, suitable for moderate power applications.

Maximum Leakage Current: 0.1 mA

The low leakage current ensures minimal power loss when the SCR is in the off state, improving overall efficiency.

Repetitive Peak Reverse Voltage: 5 V

The repetitive peak reverse voltage of 5 V provides protection against reverse polarity voltage spikes, enhancing the reliability of the SCR.

No. of Terminals: 3

With three terminals, this SCR offers flexibility in circuit design and connection options, allowing for versatile application possibilities.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-efficient design, making it ideal for applications where size is a concern.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures reliable performance even in elevated temperature environments, expanding the range of applications for this SCR.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, this device offers precise control over switching and conduction, making it suitable for a wide range of power control applications.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this SCR can operate in cold environments without sacrificing performance, making it a versatile choice for different operating conditions.

Terminal Position: BOTTOM

The bottom terminal position allows for easy and convenient installation, making it suitable for applications where space constraints or accessibility are important factors.

Maximum RMS On-state Current: 0.4 A

The maximum RMS on-state current of 0.4 A ensures stable and reliable operation under continuous load conditions, making this SCR suitable for long-duration applications.

Maximum DC Gate Trigger Voltage: 0.75 V

The low gate trigger voltage of 0.75 V allows for efficient and precise triggering of the SCR, ensuring accurate control over switching operations.

Case Connection: ANODE

The case connection at the anode provides a secure and reliable electrical connection, enhancing the overall performance and reliability of the SCR.

Repetitive Peak Off-state Voltage: 15 V

The repetitive peak off-state voltage of 15 V offers protection against voltage spikes when the SCR is in the off state, ensuring the safety and longevity of the device.

Maximum Holding Current: 2 mA

The maximum holding current of 2 mA allows the SCR to maintain conduction even after the trigger current is removed, ensuring stable operation in various load conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC35 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Additional Features:

RADIATION RESISTANT

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.02 mA

Maximum DC Gate Trigger Voltage:

.75 V

Maximum Holding Current:

2 mA

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

3 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.4 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.4 A

Repetitive Peak Off-state Voltage:

15 V

Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC35 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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