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TIC116M

Texas Instruments

TIC116M by Texas Instruments

TIC116M by Texas Instruments is a single SCR with 20mA DC gate trigger current, 80A non-repetitive peak on-state current, and 600V repetitive peak reverse voltage. It is used in applications requiring high power control such as industrial motor drives and lighting systems.

Median Price

$3.148

Lifecycle Status

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18

In-Stock Inventory

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Distrelec

Netherlands . 50 parts In-Stock

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$3.148

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$2.361

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Digiode

USA . 2,486 parts In-Stock

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Vyrian

USA . 4,676 parts In-Stock

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Tectiva GmbH

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Standard Data Resources

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ECAB

Sweden . 120 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 102 parts In-Stock

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Halfin

Belgium . 100 parts In-Stock

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LittleDiode

UK . 60 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 50 parts In-Stock

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ABC Electronics Ltd.

UK . 44 parts In-Stock

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Manotoh

Italy . 32 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 23 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 20 parts In-Stock

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Holdelec - ElecDif-Pro

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R&J Components

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GES GmbH

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Corel Iberica Componentes, S.L.

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Corphita

USA . 63 parts In-Stock

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Parana Technologies

USA . 700 parts In-Stock

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$4.347

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$4.765

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$4.347

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DigiPath Technology Company

USA . 1,181 parts In-Stock

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$4.786

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$4.403

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ChromeModa Solutions

Germany . 3,027 parts In-Stock

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$4.884

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$4.005

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$4.884

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IDEA Electronic Components Group

UK . 697 parts In-Stock

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$4.396

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Kepictronics

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A-Z Elektronik GmbH

Germany . 6,261 parts In-Stock

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Assy Fe

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Lixinc

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Overview

Experience the power of quality with the Texas Instruments TIC116M Silicon Controlled Rectifier. Manufactured by a trusted industry leader, this SCR offers reliable performance and versatility in a variety of applications. From industrial to consumer electronics, this product provides value and benefits that exceed expectations. Trust Texas Instruments for superior technology that delivers unmatched advantages to customers worldwide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the SCR, ensuring reliable performance and durability.

Maximum DC Gate Trigger Current: 20 mA

With a maximum DC gate trigger current of 20 mA, this SCR can be easily controlled and triggered, making it suitable for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies the setup and wiring process, making the installation of this SCR easy and straightforward.

Repetitive Peak On-state Current: 80 A

High repetitive peak on-state current of 80 A allows this SCR to handle heavy loads and high power applications with ease.

Maximum On-state Current: 8 A

With a maximum on-state current of 8 A, this SCR is capable of handling moderate power loads efficiently.

Maximum Leakage Current: 2 mA

Low maximum leakage current of 2 mA ensures that the SCR does not dissipate excess power when not in use, leading to energy efficiency.

Repetitive Peak Reverse Voltage: 600 V

High repetitive peak reverse voltage rating of 600 V provides effective protection against reverse voltage conditions, increasing the reliability of the SCR.

Maximum Operating Temperature: 110 °C

With a maximum operating temperature of 110 °C, this SCR can withstand high temperatures without compromising its performance, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40 °C ensures that this SCR can operate in cold environments without any issues.

Maximum RMS On-state Current: 8 A

High maximum RMS on-state current rating of 8 A allows this SCR to handle continuous current flow efficiently.

Maximum DC Gate Trigger Voltage: 1.5 V

Low maximum DC gate trigger voltage of 1.5 V ensures that the SCR can be easily triggered with minimal input voltage.

Repetitive Peak Off-state Voltage: 600 V

High repetitive peak off-state voltage rating of 600 V provides effective protection against voltage spikes and surges.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

Minimum critical rate of rise of off-state voltage of 100 V/us ensures that the SCR can respond quickly to voltage fluctuations, preventing damage to the device.

Maximum Holding Current: 40 mA

High maximum holding current of 40 mA ensures that the SCR remains in the on-state without requiring continuous gate trigger current, providing stability in operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC116M attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC116M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-14-410-5500, 5961144105500

NIIN

144105500

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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