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TIC116B

Texas Instruments

TIC116B by Texas Instruments

TIC116B by Texas Instruments is a single SCR with max. on-state current of 8A, trigger voltage of 1.5V, and max. DC gate trigger current of 20mA. It is used in applications requiring high power control such as motor drives and lighting systems due to its high non-repetitive peak on-state current capability of 80A.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Vyrian

USA . 5,939 parts In-Stock

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Digiode

USA . 2,154 parts In-Stock

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Microfarads

USA . 1,095 parts In-Stock

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Holdelec - ElecDif-Pro

France . 631 parts In-Stock

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ECAB

Sweden . 273 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 46 parts In-Stock

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Electronic Expediters

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Mil-Aero Solutions, Inc.

USA . 4 parts In-Stock

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Parana Technologies

USA . 865 parts In-Stock

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$1.963

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$2.496

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DigiPath Technology Company

USA . 1,455 parts In-Stock

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$1.989

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ChromeModa Solutions

Germany . 4,851 parts In-Stock

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IDEA Electronic Components Group

UK . 1,330 parts In-Stock

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AZTECH Wire

Italy . 856 parts In-Stock

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One Stop Electronics

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Corphita

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Authorized Procurement Solutions

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Assy Fe

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Overview

Looking for a reliable and high-quality Silicon Controlled Rectifier (SCR)? Look no further than the TIC116B by Texas Instruments. With its durable plastic/epoxy package body material and single configuration, this SCR is perfect for a wide range of applications. From industrial machinery to power supplies, the TIC116B offers a maximum on-state current of 8A and a non-repetitive peak on-state current of 80A. Trust in Texas Instruments' reputation for excellence and choose the TIC116B for your next project. Unlock the value and benefits that this SCR provides and experience top-notch performance and reliability.

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the SCR, making it suitable for various applications.

Maximum DC Gate Trigger Current 20 mA

High DC Gate Trigger Current ensures reliable and consistent triggering of the SCR, leading to stable performance.

Configuration SINGLE

Single configuration simplifies installation and integration of the SCR in circuits, making it user-friendly.

Non Repetitive Peak On-state Current 80 A

High Non-Repetitive Peak On-state Current capacity indicates the SCR's ability to handle surge currents effectively.

Package Shape RECTANGULAR

Rectangular package shape allows for easy placement and mounting of the SCR in various electronic systems.

Terminal Form THROUGH-HOLE

Through-hole terminal form ensures secure connection and stability in the circuit, enhancing the reliability of the SCR.

Maximum On-state Current 8 A

High Maximum On-state Current rating enables the SCR to handle continuous high current loads without overheating or failure.

Maximum Leakage Current 2 mA

Low Leakage Current minimizes power loss and improves the efficiency of the SCR in maintaining a stable off-state.

Repetitive Peak Reverse Voltage 200 V

High Repetitive Peak Reverse Voltage capacity allows the SCR to withstand reverse voltage spikes and protect the circuit from damage.

No. of Terminals 3

Three terminals simplify connection and ensure proper orientation of the SCR in the circuit, reducing the chance of wiring errors.

Package Style (Meter) FLANGE MOUNT

Flange mount package style provides mechanical support and ease of mounting, making it suitable for industrial applications.

Maximum Operating Temperature 110 °C

High Maximum Operating Temperature range allows the SCR to operate reliably in challenging thermal environments without performance degradation.

Trigger Device Type SCR

SCR trigger device type offers fast and reliable switching characteristics, making it ideal for applications requiring precise control.

Minimum Operating Temperature -40 °C

Wide Minimum Operating Temperature range ensures the SCR can function in extreme cold conditions without losing performance or efficiency.

Terminal Position SINGLE

Single terminal position simplifies wiring and installation of the SCR, ensuring correct placement and easy maintenance.

Maximum RMS On-state Current 8 A

High Maximum RMS On-state Current rating allows the SCR to handle continuous AC loads efficiently without overheating or voltage drops.

Maximum DC Gate Trigger Voltage 1.5 V

Low Maximum DC Gate Trigger Voltage ensures efficient and consistent triggering of the SCR with minimal power consumption.

Case Connection ANODE

Anode case connection provides easy integration with circuitry and ensures proper polarity, preventing damage to the SCR.

Repetitive Peak Off-state Voltage 200 V

High Repetitive Peak Off-state Voltage capacity allows the SCR to withstand reverse voltage spikes and maintain a stable off-state.

Minimum Critical Rate of Rise of Off-state Voltage 100 V/us

High Minimum Critical Rate of Rise of Off-state Voltage rating ensures the SCR can respond quickly to voltage changes and protect the circuit from overloads.

Maximum Holding Current 40 mA

High Maximum Holding Current ensures the SCR can maintain its on-state condition without external control signals, improving efficiency and reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC116B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC116B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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