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2N5062G

Onsemi

2N5062G by Onsemi

2N5062G by Onsemi is a SCR with max DC gate trigger current of 0.2mA, non-repetitive peak on-state current of 10A, and max on-state current of 0.51A. It is used in applications requiring reliable switching capabilities at temperatures ranging from -40 to 110°C.

Median Price

$0.112

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 68 parts In-Stock

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$0.112

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Vyrian

USA . 7,881 parts In-Stock

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VNN

France . 4,579 parts In-Stock

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Chip Stock

USA . 2,640 parts In-Stock

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Digiode

USA . 1,439 parts In-Stock

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Pegasus Components GmbH

Germany . 100 parts In-Stock

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Corohmni

South Africa . 41 parts In-Stock

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$0.097

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Semicontronic

India . 1,245 parts In-Stock

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$0.100

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$0.098

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$0.097

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$0.100

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Aranea Global

USA . 1,000 parts In-Stock

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$0.110

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$0.106

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Continental Prestige Electronics

USA . 5,445 parts In-Stock

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$0.112

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Argo Parts USA

USA . 2,174 parts In-Stock

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$5.013

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$4.562

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$4.111

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50

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$4.111

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AZTECH Wire

Italy . 716 parts In-Stock

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$17.567

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Ampacity Inc.

Singapore . 1,623 parts In-Stock

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$21.100

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Perfect Parts

USA . 9,897 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,537 parts In-Stock

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Problanco Electronics

Mexico . 5,060 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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TANS Electronics

Latvia . 3,606 parts In-Stock

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SupplyDigital Components

Austria . 2,311 parts In-Stock

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UHIMA Technologies

Türkiye . 638 parts In-Stock

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Corphita

USA . 262 parts In-Stock

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Kulean Microsystems

USA . 192 parts In-Stock

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Overview

Elevate your electronic designs with the 2N5062G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their Silicon Controlled Rectifiers (SCR). This versatile component is perfect for a wide range of applications, offering customers high performance and efficiency. With maximum DC Gate Trigger Current of 0.2 mA and Non Repetitive Peak On-state Current of 10 A, this SCR delivers exceptional value and benefits for your projects. Trust Onsemi to provide you with cutting-edge technology that meets your needs every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the SCR, making it suitable for various environments.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient control of the SCR, resulting in optimized performance and energy savings.

Configuration: SINGLE

Single configuration simplifies the installation and operation of the SCR, making it user-friendly and reliable.

Repetitive Peak On-state Current: 10 A

High on-state current capability allows the SCR to handle heavy loads and high-power applications effectively.

Maximum Leakage Current: 0.05 mA

Low leakage current minimizes power loss and enhances the efficiency of the SCR during standby or off-state conditions.

Repetitive Peak Reverse Voltage: 100 V

The high reverse voltage rating ensures protection against voltage spikes and reverse polarity, ensuring safe and reliable operation.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows the SCR to function reliably in various temperature conditions, making it versatile and durable.

Trigger Device Type: SCR

Being an SCR, this device offers precise control over the flow of current, making it suitable for applications that require accurate power regulation.

Maximum RMS On-state Current: 0.8 A

This high current rating allows the SCR to handle moderate to high power loads effectively, making it ideal for a wide range of applications.

Maximum DC Gate Trigger Voltage: 1.2 V

Low gate trigger voltage ensures efficient control of the SCR and reduces power consumption, contributing to overall energy savings.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N5062G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

30 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.05 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.51 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N5062G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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