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C106D1

Onsemi

C106D1 by Onsemi

The Onsemi C106D1 is a single SCR with max. on-state current of 4A, non-repetitive peak on-state current of 20A, and max. DC gate trigger current of 0.2mA. It is used in applications requiring reliable switching at temperatures ranging from -40°C to 110°C, such as power control circuits and motor drives.

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Lifecycle Status

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ComSIT Distribution GmbH

Germany . 25,800 parts In-Stock

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ComSIT USA

USA . 25,800 parts In-Stock

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Digiode

USA . 1,161 parts In-Stock

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J2 Sourcing AB

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PUI

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Vyrian

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Corel Iberica Componentes, S.L.

Spain . 114 parts In-Stock

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Lakeland Logistics Inc

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ACDS - Activité Composants Distribution Service

France . 89 parts In-Stock

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Bristol Electronics

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Electronic Expediters

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Nova Conductors

Japan . 76 parts In-Stock

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EMSNET

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Component Electronics Inc.

Canada . 30 parts In-Stock

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MRC Electronics

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LittleDiode

UK . 20 parts In-Stock

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ECAB

Sweden . 20 parts In-Stock

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ABC Electronics Ltd.

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Mil-Aero Solutions, Inc.

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GES GmbH

Germany . 8 parts In-Stock

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Goldney Electronics S.L.

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MISTER SPROCKETS

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Semicontronic

India . 584 parts In-Stock

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$4.100

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$3.998

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$3.977

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AZTECH Wire

Italy . 840 parts In-Stock

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$18.549

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Kepictronics

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Problanco Electronics

Mexico . 6,562 parts In-Stock

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Kulean Microsystems

USA . 6,226 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,389 parts In-Stock

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TANS Electronics

Latvia . 1,290 parts In-Stock

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Assy Fe

Spain . 651 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 589 parts In-Stock

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Bastille Electronics

Australia . 560 parts In-Stock

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Corohmni

South Africa . 418 parts In-Stock

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UHIMA Technologies

Türkiye . 296 parts In-Stock

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Perfect Parts

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Overview

Unleash the power of the C106D1 by Onsemi, a top-quality Silicon Controlled Rectifier that promises reliability and durability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this SCR offers seamless performance in a variety of applications. From industrial machinery to consumer electronics, the C106D1 delivers superior functionality and efficiency. Experience the value of precision engineering with this cutting-edge product that ensures optimal performance and longevity. Elevate your projects with the C106D1 and revolutionize the way you work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

Low trigger current ensures energy efficiency and precise control over the switching of the SCR.

Configuration: SINGLE

Single configuration simplifies the circuit design and installation process.

Non Repetitive Peak On-state Current: 20 A

High peak on-state current allows for handling of heavy loads and surge currents effectively.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy mounting and efficient use of space in electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections in the circuit board.

Maximum On-state Current: 4 A

The maximum on-state current rating ensures safe operation under normal load conditions.

Maximum Leakage Current: 0.1 mA

Low leakage current minimizes power loss and improves overall efficiency of the SCR.

Repetitive Peak Reverse Voltage: 400 V

High reverse voltage rating provides robust protection against voltage spikes and transients.

No. of Terminals: 3

Three terminals offer easy connectivity and facilitate integration into the circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure and stable mounting of the SCR in the electronic system.

Maximum Operating Temperature: 110 °C

High maximum operating temperature range ensures reliable performance in various environmental conditions.

Trigger Device Type: SCR

The SCR design provides precise and reliable triggering for efficient switching operations.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature range allows for operation in cold environments without compromising performance.

Terminal Finish: TIN LEAD

Tin lead finish on terminals ensures good conductivity and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and reduces the chances of wiring errors.

Maximum RMS On-state Current: 4 A

High RMS on-state current rating indicates the SCR's capability to handle continuous load currents effectively.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage ensures efficient control over the SCR's switching operation with minimal power consumption.

Case Connection: ANODE

Anode case connection provides reliable grounding and helps in dissipating heat effectively during operation.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating offers excellent protection against voltage surges and ensures safe operation of the SCR.

Maximum Holding Current: 3 mA

The maximum holding current determines the minimum current required to maintain the SCR in the on-state, improving stability.

Nominal Circuit Commutated Turn-off Time: 40 us

Fast turn-off time enhances the efficiency of the SCR in switching applications, reducing power losses.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance ensures the SCR can withstand the soldering process during assembly without damage.

Technical Specifications

Silicon Controlled Rectifiers (SCR) C106D1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Case Connection:

Nominal Circuit Commutated Turn-off Time:

40 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

3 mA

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

4 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

C106D1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-194-7454, 5961011947454, 5961-99-644-0416, 5961996440416

NIIN

011947454, 996440416

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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