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C106M

Onsemi

C106M by Onsemi

The Onsemi C106M is a single SCR with max. on-state current of 4A, trigger voltage of 0.8V, and off-state voltage of 600V. It's used in applications requiring precise power control like motor drives and lighting systems due to its high reliability and low leakage current.

Median Price

$4.000

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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DF Sales Co.

USA . 53 parts In-Stock

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$4.000

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DF Sales Co.

USA . 53 parts In-Stock

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Digiode

USA . 757 parts In-Stock

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Vyrian

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R&J Components

USA . 100 parts In-Stock

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Component Electronics Inc.

Canada . 15 parts In-Stock

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ABC Electronics Ltd.

UK . 7 parts In-Stock

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Corohmni

South Africa . 63 parts In-Stock

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$0.173

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Metaverse IC Inc.

Canada . 56,800 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,411 parts In-Stock

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TANS Electronics

Latvia . 8,353 parts In-Stock

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SupplyDigital Components

Austria . 8,267 parts In-Stock

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Kulean Microsystems

USA . 5,054 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Problanco Electronics

Mexico . 2,711 parts In-Stock

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Northwest PG Solutions

USA . 1,733 parts In-Stock

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Corphita

USA . 1,398 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 88 parts In-Stock

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Overview

Discover the power of the C106M by Onsemi, a high-quality Silicon Controlled Rectifier that offers unmatched performance and reliability. With a maximum on-state current of 4A and a repetitive peak reverse voltage of 600V, this SCR is perfect for a wide range of applications. From industrial motors to lighting controls, the C106M provides exceptional value and benefits to customers looking for top-notch quality and efficiency. Trust in Onsemi's reputation for excellence and experience the advantages of the C106M in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SCR, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 0.2 mA

Allows for precise and controlled triggering of the SCR, leading to efficient operation.

Configuration: SINGLE

Simplified setup and usage, making it easy to integrate into various electronic circuits.

Maximum On-state Current: 4 A

Can handle high current loads without overheating, suitable for a wide range of applications.

Repetitive Peak Reverse Voltage: 600 V

Provides a high reverse voltage capability, ensuring reliable performance in diverse voltage environments.

Maximum Operating Temperature: 110 °C

Can operate in high-temperature conditions without performance degradation, suitable for industrial settings.

Trigger Device Type: SCR

Utilizes Silicon Controlled Rectifier technology, known for its reliability and efficiency in switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) C106M attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Nominal Circuit Commutated Turn-off Time:

40 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

8 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

3 mA

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

4 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

C106M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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