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C106M1

Onsemi

C106M1 by Onsemi

C106M1 by Onsemi is a single SCR with max. on-state current of 4A, DC gate trigger current of 0.2mA, and repetitive peak off-state voltage of 600V. It is used in applications requiring reliable switching at temperatures ranging from -40 °C to 110°C.

Median Price

$2.500

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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TEDSS.com

USA . 8 parts In-Stock

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$2.500

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ComSIT Distribution GmbH

Germany . 2,150 parts In-Stock

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Sinequanon

UK . 1,900 parts In-Stock

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Digiode

USA . 1,771 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 398 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 236 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 224 parts In-Stock

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Vyrian

USA . 177 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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LittleDiode

UK . 99 parts In-Stock

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Lakeview Electronics

USA . 20 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 489 parts In-Stock

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Native Components

USA . 134 parts In-Stock

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$4.932

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Ampacity Inc.

Singapore . 728 parts In-Stock

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$5.100

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,967 parts In-Stock

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Problanco Electronics

Mexico . 7,390 parts In-Stock

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SupplyDigital Components

Austria . 7,175 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,577 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,051 parts In-Stock

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Corphita

USA . 2,311 parts In-Stock

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Northwest PG Solutions

USA . 1,654 parts In-Stock

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Assy Fe

Spain . 865 parts In-Stock

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Kulean Microsystems

USA . 659 parts In-Stock

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UHIMA Technologies

Türkiye . 325 parts In-Stock

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Perfect Parts

USA . 224 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 100 parts In-Stock

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TANS Electronics

Latvia . 91 parts In-Stock

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Overview

Experience the superior quality and reliability of the C106M1 by Onsemi, a leading manufacturer in the industry. As a Silicon Controlled Rectifier (SCR), this product offers unmatched performance and efficiency for a variety of applications. From industrial machinery to power control systems, the C106M1 provides customers with exceptional value, benefits, and advantages. Trust Onsemi for cutting-edge technology that delivers results you can count on. Elevate your projects with the C106M1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside.

Maximum DC Gate Trigger Current: 0.2 mA

Allows for efficient gate triggering with low current requirements.

Configuration: SINGLE

Simplifies the setup and operation of the SCR.

Repetitive Peak On-state Current: 20 A

Capable of handling high on-state currents for demanding applications.

Maximum On-state Current: 4 A

Suitable for moderate current requirements in various circuits.

Repetitive Peak Reverse Voltage: 600 V

Provides high reverse voltage protection for the circuit.

Maximum Operating Temperature: 110 °C

Can withstand high temperature environments without compromising performance.

Trigger Device Type: SCR

Designed specifically as a silicon-controlled rectifier for precise control.

Technical Specifications

Silicon Controlled Rectifiers (SCR) C106M1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Case Connection:

Nominal Circuit Commutated Turn-off Time:

40 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

3 mA

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

4 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

C106M1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-21-905-4674, 5961219054674

NIIN

219054674

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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