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2N689A

Texas Instruments

2N689A by Texas Instruments

2N689A by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 40mA, Non Repetitive Peak On-state Current of 250A, and Max On-state Current of 18A. It operates b/w -60 to 125°C and has a Repetitive Peak Off-state Voltage of 500V. Ideal for power control applications.

Median Price

$12.750

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 192 parts In-Stock

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$12.750

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Digiode

USA . 4,114 parts In-Stock

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Vyrian

USA . 3,684 parts In-Stock

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DigiKey Marketplace

USA . 50 parts In-Stock

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Native Components

USA . 535 parts In-Stock

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$1.453

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535

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Northwest PG Solutions

USA . 2,178 parts In-Stock

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$1.599

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Parana Technologies

USA . 2,155 parts In-Stock

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$2.905

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$3.401

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DigiPath Technology Company

USA . 1,723 parts In-Stock

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$3.199

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$2.943

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ChromeModa Solutions

Germany . 6,018 parts In-Stock

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$3.264

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$2.676

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IDEA Electronic Components Group

UK . 969 parts In-Stock

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$3.264

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$2.938

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One Stop Electronics

USA . 1,185 parts In-Stock

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$5.100

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AZTECH Wire

Italy . 567 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,002 parts In-Stock

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Corphita

USA . 4,813 parts In-Stock

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Microchip USA

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CPlus Electronics

USA . 4,000 parts In-Stock

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Overview

Unleash the power of the 2N689A by Texas Instruments, a top-of-the-line Silicon Controlled Rectifier that guarantees unmatched quality and reliability. Manufactured by the industry leader in semiconductor technology, this SCR is perfect for a wide range of applications. From industrial automation to power supplies, the 2N689A offers exceptional performance and efficiency. Trust Texas Instruments to deliver cutting-edge solutions that exceed your expectations and elevate your projects to new heights. Explore the endless possibilities with the 2N689A today!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 40 mA

This low trigger current helps in efficient control of the SCR and reduces power consumption.

Non Repetitive Peak On-state Current: 250 A

High peak on-state current capability allows the SCR to handle heavy loads or transient surges effectively.

Maximum On-state Current: 18 A

With a high on-state current rating, this SCR can reliably handle continuous high current applications without overheating.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state, leading to high efficiency.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the SCR to function smoothly in various environments without risking overheating or failure.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over current flow and is ideal for applications requiring high current switching.

Repetitive Peak Off-state Voltage: 500 V

High off-state voltage rating ensures safe operation and protection against voltage spikes or surges.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

Fast rate of rise of off-state voltage capability enhances the SCR's ability to respond quickly to sudden changes, making it suitable for dynamic applications.

Maximum Holding Current: 50 mA

The high holding current ensures the SCR remains in the on-state reliably without false triggering, providing stability during operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N689A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

18 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N689A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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