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2N687

Texas Instruments

2N687 by Texas Instruments

2N687 by Texas Instruments is a Silicon Controlled Rectifier with 30mA DC Gate Trigger Current, 150A Non Repetitive Peak On-state Current, and 16A Max On-state Current. It operates b/w -60°C to 125°C and has a max DC Gate Trigger Voltage of 3V. Ideal for applications requiring high current switching capabilities.

Median Price

$15.450

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 4 parts In-Stock

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$8.700

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American Microsemiconductor Inc.

USA . 57 parts In-Stock

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$15.450

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Forefront Electronics and Design

USA . 1 parts In-Stock

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Digiode

USA . 5,574 parts In-Stock

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Vyrian

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Elite Semiconductor

USA . 2,250 parts In-Stock

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Anansix

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Electronic Expediters

USA . 1,334 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ECAB

Sweden . 141 parts In-Stock

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PUI

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100

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Area51 Electronics

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100

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DigiKey Marketplace

USA . 50 parts In-Stock

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Holdelec - ElecDif-Pro

France . 28 parts In-Stock

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Resion

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Electronics Depot

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ACDS - Activité Composants Distribution Service

France . 20 parts In-Stock

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ComSIT Distribution GmbH

Germany . 13 parts In-Stock

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R&J Components

USA . 5 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 5 parts In-Stock

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LittleDiode

UK . 4 parts In-Stock

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DF Sales Co.

USA . 2 parts In-Stock

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DF Sales Co.

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Mentor Electronics Marketing, LLC

USA . 1 parts In-Stock

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Distributors (Availability)

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Northwest PG Solutions

USA . 3,363 parts In-Stock

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$0.587

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$0.587

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ChromeModa Solutions

Germany . 3,985 parts In-Stock

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$2.890

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$2.370

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IDEA Electronic Components Group

UK . 1,481 parts In-Stock

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$3.514

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$3.163

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DigiPath Technology Company

USA . 1,234 parts In-Stock

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$6.609

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MKK Technologies

India . 1,138 parts In-Stock

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$6.609

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AZTECH Wire

Italy . 469 parts In-Stock

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$7.621

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Microchip USA

USA . 8,412 parts In-Stock

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$18.200

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One Stop Electronics

USA . 1,512 parts In-Stock

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$22.100

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QUARKTWIN TECHNOLOGY LTD

USA . 18,261 parts In-Stock

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Corphita

USA . 4,292 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Parana Technologies

USA . 2,363 parts In-Stock

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$4.202

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2,363

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$4.202

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Native Components

USA . 1,425 parts In-Stock

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Component Stockers USA

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RTC Component Inc.

USA . 5 parts In-Stock

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Overview

Experience the power of the Texas Instruments 2N687 Silicon Controlled Rectifier (SCR). With a reputation for high-quality manufacturing, Texas Instruments delivers a reliable and efficient product that is ideal for a wide range of applications. From industrial machinery to household appliances, this SCR offers customers unrivaled performance and durability. Trust in Texas Instruments to provide you with the value, benefits, and advantages you need for your next project.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 30 mA

With a high maximum DC gate trigger current, this SCR can be easily and accurately triggered, ensuring reliable performance.

Non Repetitive Peak On-state Current: 150 A

The high non repetitive peak on-state current allows this SCR to handle large surge currents effectively, making it suitable for applications where heavy loads are present.

Maximum On-state Current: 16 A

The high maximum on-state current rating ensures that this SCR can handle moderate to high current loads without any issues, making it versatile for different applications.

Maximum Leakage Current: 5 mA

The low maximum leakage current helps in reducing power losses and improving efficiency in the circuit where this SCR is utilized.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SCR can withstand elevated temperatures without compromising its performance, making it suitable for harsh environments.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over the flow of current, making it ideal for diverse applications such as power control and switching.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature rating ensures that this SCR can operate even in extremely cold conditions, increasing its usability in various environments.

Maximum DC Gate Trigger Voltage: 3 V

With a low maximum DC gate trigger voltage, this SCR can be easily triggered with low voltage signals, simplifying the triggering circuit design.

Repetitive Peak Off-state Voltage: 300 V

The high repetitive peak off-state voltage rating allows this SCR to block high voltages when it is in the off-state, making it suitable for applications with high voltage requirements.

Maximum Holding Current: 50 mA

The high maximum holding current ensures that this SCR can remain in the on-state even after the gate signal is removed, providing stability in the circuit operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N687 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

5 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N687 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-262-5667, 5961002625667, 5961-14-213-7414, 5961142137414, 5961-01-335-6626, 5961013356626

NIIN

002625667, 142137414, 013356626

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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