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2N688A

Texas Instruments

2N688A by Texas Instruments

2N688A by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 40mA, Non Repetitive Peak On-state Current of 250A, and Max On-state Current of 18A. It operates b/w -60 to 125°C and has a Repetitive Peak Off-state Voltage of 400V. Ideal for power control applications requiring high current handling capabilities.

Median Price

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Lifecycle Status

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8

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DigiKey

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Vyrian

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Bristol Electronics

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DigiKey Marketplace

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ACDS - Activité Composants Distribution Service

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Electronic Expediters

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Native Components

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Northwest PG Solutions

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Parana Technologies

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DigiPath Technology Company

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IDEA Electronic Components Group

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ChromeModa Solutions

Germany . 689 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Overview

Discover the power and precision of the Texas Instruments 2N688A Silicon Controlled Rectifier. With Texas Instruments' reputation for quality and innovation, this SCR offers unmatched reliability and performance. Ideal for a variety of applications, from industrial to consumer electronics, the 2N688A provides exceptional value with its high on-state current, low leakage current, and wide operating temperature range. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 40 mA

Low gate trigger current ensures reliable and efficient operation, making the product suitable for various applications.

Non Repetitive Peak On-state Current: 250 A

High peak on-state current capability allows the product to handle large transient currents, making it suitable for high-power applications.

Maximum On-state Current: 18 A

The high on-state current rating allows the product to handle substantial continuous current, making it ideal for medium-power applications.

Maximum Leakage Current: 1 mA

Low leakage current ensures energy efficiency and minimal power wastage during off-state operation.

Maximum Operating Temperature: 125 °C

The high operating temperature range ensures the product can function reliably in various environmental conditions.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier) device, it offers precise control over the switching of AC power, making it suitable for power control applications.

Minimum Operating Temperature: -60 °C

The wide temperature range allows the product to operate in extreme cold conditions, increasing its versatility in different environments.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage ensures efficient triggering and control of the SCR, making it suitable for low-power control applications.

Repetitive Peak Off-state Voltage: 400 V

The high repetitive peak off-state voltage rating allows the product to block high voltages efficiently, enhancing its reliability in power distribution applications.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

The fast rate of rise of off-state voltage capability makes the product suitable for fast-switching applications where voltage spikes need to be controlled.

Maximum Holding Current: 50 mA

The high holding current capability ensures the SCR remains in the on-state even in the absence of gate current, making it suitable for latch-up protection applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N688A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

18 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N688A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-068-8231, 5961000688231

NIIN

000688231

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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