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2N684A

Texas Instruments

2N684A by Texas Instruments

2N684A by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 40mA, Non Repetitive Peak On-state Current of 250A, and Max On-state Current of 18A. It operates b/w -60 to 125°C and has a Repetitive Peak Off-state Voltage of 150V. Ideal for power control applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,786 parts In-Stock

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Digiode

USA . 1,415 parts In-Stock

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DigiKey Marketplace

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Native Components

USA . 264 parts In-Stock

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$0.119

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Northwest PG Solutions

USA . 1,978 parts In-Stock

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$0.131

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Parana Technologies

USA . 1,668 parts In-Stock

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$2.841

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DigiPath Technology Company

USA . 312 parts In-Stock

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$2.577

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ChromeModa Solutions

Germany . 5,122 parts In-Stock

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$2.630

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IDEA Electronic Components Group

UK . 434 parts In-Stock

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AZTECH Wire

Italy . 295 parts In-Stock

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$18.638

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One Stop Electronics

USA . 921 parts In-Stock

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Microchip USA

USA . 5,740 parts In-Stock

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Corphita

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Overview

Unlock the power of reliable and high-quality electronics with the 2N684A by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments brings you the best Silicon Controlled Rectifiers (SCR) for your applications. With a maximum DC Gate Trigger Current of 40 mA and Non Repetitive Peak On-state Current of 250 A, this SCR offers superior performance and durability. From industrial automation to power supplies, the 2N684A provides unmatched value, benefits, and advantages to help you achieve optimal results in your projects. Trust Texas Instruments to deliver excellence in every component.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 40 mA

This high gate trigger current allows for precise control over the SCR, ensuring reliable performance.

Non Repetitive Peak On-state Current: 250 A

The high non repetitive peak on-state current capability makes this SCR suitable for handling high power applications without risk of damage.

Maximum On-state Current: 18 A

The maximum on-state current rating of 18A ensures the SCR can handle moderate to high power loads effectively.

Maximum Leakage Current: 1 mA

Low leakage current of 1 mA ensures minimal power wastage and improves efficiency of the device.

Maximum Operating Temperature: 125 °C

With a high operating temperature range of up to 125°C, this SCR can withstand elevated temperatures without losing its functionality.

Trigger Device Type: SCR

Being a silicon controlled rectifier, this device offers precise control over the flow of current, making it suitable for various industrial applications.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C ensures the SCR can function in extreme cold environments as well.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage requirement of 3V ensures efficient triggering of the SCR with minimal power consumption.

Repetitive Peak Off-state Voltage: 150 V

The repetitive peak off-state voltage rating of 150V allows for safe operation in high voltage applications without risk of breakdown.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

The high critical rate of rise of off-state voltage ensures quick response and reliable switching performance of the SCR.

Maximum Holding Current: 50 mA

The maximum holding current of 50 mA ensures stable operation of the SCR in various load conditions, preventing false triggering or unintentional turn-off.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N684A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

18 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

150 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N684A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-228-6810, 5961002286810

NIIN

002286810

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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