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T1901N80TOHXPSA1

Infineon Technologies

T1901N80TOHXPSA1 by Infineon Technologies

T1901N80TOHXPSA1 by Infineon Technologies is a SINGLE SCR with 8000V repetitive peak reverse voltage and 3300A max RMS on-state current. Ideal for high-power applications, it has a max DC gate trigger current of 350mA. This surface-mount device operates at up to 125°C, making it suitable for demanding industrial environments.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 7,161 parts In-Stock

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Digiode

USA . 604 parts In-Stock

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Nova Conductors

Japan . 91 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,600 parts In-Stock

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$2.180

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$2.180

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Modulus Dynamics

Lithuania . 4,209 parts In-Stock

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$3.738

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$3.588

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$3.439

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Corohmni

South Africa . 510 parts In-Stock

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$4.385

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Ampacity Inc.

Singapore . 1,090 parts In-Stock

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$9.100

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AZTECH Wire

Italy . 635 parts In-Stock

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$14.207

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$14.207

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Semicontronic

India . 1,413 parts In-Stock

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$16.100

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$15.698

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$15.617

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Component Stockers USA

USA . 668 parts In-Stock

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$99.990

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Microchip USA

USA . 1,188 parts In-Stock

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Argo Parts USA

USA . 3,757 parts In-Stock

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Continental Prestige Electronics

USA . 2,008 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Unleash the power of Infineon Technologies with the T1901N80TOHXPSA1 Silicon Controlled Rectifier (SCR). With a maximum DC Gate Trigger Current of 350 mA and a Repetitive Peak Reverse Voltage of 8000 V, this SCR offers unparalleled quality and reliability. Ideal for applications requiring high voltage and current control, this single configuration device is the perfect choice for your project. Trust in Infineon's expertise and experience to deliver exceptional performance and value. Elevate your designs with the T1901N80TOHXPSA1 and experience the benefits of cutting-edge technology in action.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 350 mA

This high gate trigger current allows for precise control over when the SCR is activated, ensuring reliability in operation.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate the SCR into various systems.

Surface Mount: YES

Being surface mountable enables easy and secure installation of the SCR in compact electronic devices or PCBs.

Package Shape: ROUND

Round package shape provides uniform distribution of electrical components within the SCR, leading to efficient heat dissipation and better performance.

Repetitive Peak Reverse Voltage: 8000 V

High reverse voltage tolerance ensures the SCR can handle high-voltage applications without breakdown, making it reliable for industrial use.

No. of Terminals: 3

Three terminals offer flexibility in circuit connection and enable the SCR to be used in various configurations to suit different applications.

Package Style (Meter): DISK BUTTON

Disk button package style provides physical protection to the SCR and ensures durability, enhancing its longevity in harsh operating environments.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the SCR to withstand elevated temperatures, making it suitable for applications where heat dissipation is crucial.

Trigger Device Type: SCR

Being an SCR trigger device type, it offers precise and reliable switching performance, essential for applications that require accurate control over power flow.

Maximum RMS On-state Current: 3300 A

High RMS on-state current rating enables the SCR to handle high operating currents, making it ideal for heavy-duty industrial applications.

Repetitive Peak Off-state Voltage: 8000 V

The high off-state voltage capability ensures the SCR can safely withstand voltage spikes, making it suitable for power electronics and high-voltage applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) T1901N80TOHXPSA1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Configuration:

Maximum DC Gate Trigger Current:

350 mA

JESD-30 Code:

O-XXDB-X3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

3300 A

Repetitive Peak Off-state Voltage:

8000 V

Repetitive Peak Reverse Voltage:

8000 V

Surface Mount:

YES

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

T1901N80TOHXPSA1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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