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2N686

Texas Instruments

2N686 by Texas Instruments

2N686 by Texas Instruments is a Silicon Controlled Rectifier with 30mA DC Gate Trigger Current, 150A Non Repetitive Peak On-state Current, and 16A Max On-state Current. It operates b/w -60°C to 125°C and has a max DC Gate Trigger Voltage of 3V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

$12.500

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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TEDSS.com

USA . 57 parts In-Stock

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$12.500

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Vyrian

USA . 7,607 parts In-Stock

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Elite Semiconductor

USA . 2,500 parts In-Stock

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Digiode

USA . 1,418 parts In-Stock

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Electronic Expediters

USA . 182 parts In-Stock

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DigiKey Marketplace

USA . 50 parts In-Stock

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Halfin

Belgium . 19 parts In-Stock

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DF Sales Co.

USA . 11 parts In-Stock

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DF Sales Co.

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Resion

USA . 10 parts In-Stock

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R&J Components

USA . 2 parts In-Stock

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ECAB

Sweden . 1 parts In-Stock

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Native Components

USA . 668 parts In-Stock

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$0.228

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$0.219

668

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Northwest PG Solutions

USA . 64 parts In-Stock

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$0.250

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$0.221

64

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One Stop Electronics

USA . 1,600 parts In-Stock

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$2.100

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$2.100

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Parana Technologies

USA . 944 parts In-Stock

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$3.722

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$4.224

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$3.722

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DigiPath Technology Company

USA . 1,139 parts In-Stock

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$4.098

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$3.770

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ChromeModa Solutions

Germany . 1,668 parts In-Stock

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$4.182

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$3.429

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IDEA Electronic Components Group

UK . 668 parts In-Stock

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$4.182

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$3.764

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AZTECH Wire

Italy . 468 parts In-Stock

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$8.345

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Microchip USA

USA . 8,235 parts In-Stock

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$18.200

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QUARKTWIN TECHNOLOGY LTD

USA . 15,847 parts In-Stock

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Corphita

USA . 3,604 parts In-Stock

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Assy Fe

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RTC Component Inc.

USA . 2 parts In-Stock

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Overview

Unlock the power of reliable performance with the 2N686 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and durability in their Silicon Controlled Rectifiers (SCR) like the 2N686. This versatile component is ideal for a wide range of applications, offering impressive features such as maximum DC gate trigger current of 30 mA and non-repetitive peak on-state current of 150 A. Trust in the 2N686 to deliver consistent results, providing customers with value, efficiency, and peace of mind for all their electronic needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 30 mA

Having a high maximum DC gate trigger current allows for reliable and consistent triggering of the SCR, ensuring proper operation and performance.

Non Repetitive Peak On-state Current: 150 A

The high non-repetitive peak on-state current capability makes this SCR suitable for applications requiring high current handling capabilities, making it a reliable choice for demanding environments.

Maximum On-state Current: 16 A

With a maximum on-state current of 16 A, this SCR can handle moderate current loads effectively, making it versatile for a range of applications.

Maximum Leakage Current: 5.5 mA

The low maximum leakage current ensures minimal power loss when the SCR is in the off state, contributing to energy efficiency and cost savings.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C enables the SCR to function reliably in high temperature environments, making it suitable for industrial applications.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this device offers precise and controlled switching of power, making it ideal for applications where precise control is required.

Minimum Operating Temperature: -60 °C

With a minimum operating temperature of -60°C, this SCR can also operate in extremely cold environments, enhancing its versatility for use in a wide range of temperature conditions.

Maximum DC Gate Trigger Voltage: 3 V

The low maximum DC gate trigger voltage of 3 V ensures that the SCR can be easily triggered with minimal input voltage, simplifying the control circuitry requirements.

Repetitive Peak Off-state Voltage: 250 V

The high repetitive peak off-state voltage rating of 250 V ensures reliable isolation and protection in the off state, enhancing the safety and durability of the device.

Maximum Holding Current: 50 mA

The high maximum holding current of 50 mA ensures that the SCR remains latched in the on-state, providing stable operation once triggered and enhancing reliability in continuous operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N686 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

5.5 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

250 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N686 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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