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2N684

Texas Instruments

2N684 by Texas Instruments

2N684 by Texas Instruments is a Silicon Controlled Rectifier with 30mA DC Gate Trigger Current, 150A Non Repetitive Peak On-state Current, and 16A Max On-state Current. It operates b/w -60°C to 125°C and has a max DC Gate Trigger Voltage of 3V. Ideal for applications requiring high current handling capabilities like power control systems.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Vyrian

USA . 7,460 parts In-Stock

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Elite Semiconductor

USA . 3,010 parts In-Stock

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Digiode

USA . 2,491 parts In-Stock

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Electronic Expediters

USA . 27 parts In-Stock

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Resion

USA . 21 parts In-Stock

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Halfin

Belgium . 15 parts In-Stock

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First Choice Components Inc.

USA . 12 parts In-Stock

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PUI

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ACDS - Activité Composants Distribution Service

France . 3 parts In-Stock

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Holdelec - ElecDif-Pro

France . 3 parts In-Stock

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R&J Components

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Parana Technologies

USA . 570 parts In-Stock

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$2.434

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$2.931

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DigiPath Technology Company

USA . 775 parts In-Stock

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$2.680

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ChromeModa Solutions

Germany . 5,182 parts In-Stock

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IDEA Electronic Components Group

UK . 741 parts In-Stock

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One Stop Electronics

USA . 1,368 parts In-Stock

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AZTECH Wire

Italy . 237 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,590 parts In-Stock

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Microchip USA

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Native Components

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Corphita

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Perfect Parts

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Northwest PG Solutions

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RTC Component Inc.

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Overview

Experience the superior quality and reliability of the Texas Instruments 2N684 Silicon Controlled Rectifier. Manufactured by a trusted industry leader, this SCR offers unparalleled performance and durability for a wide range of applications. From power supplies to motor control, the 2N684 provides exceptional value with its high current capabilities and precise triggering mechanisms. Trust in Texas Instruments for your electronic component needs and discover the advantages of the 2N684 today.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 30 mA

The low trigger current required for this SCR allows for efficient and precise control of the switching process, making it suitable for various applications.

Non Repetitive Peak On-state Current: 150 A

With a high peak on-state current capability, this SCR can handle sudden surge currents effectively, making it reliable for high-power applications.

Maximum On-state Current: 16 A

The maximum on-state current rating of 16 A ensures that this SCR can handle moderate power loads with ease, making it versatile for different circuit requirements.

Maximum Leakage Current: 6.5 mA

Low leakage current ensures minimal power loss and improved efficiency when the SCR is in the off-state, making it energy-efficient for various applications.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this SCR can withstand harsh environmental conditions and operate reliably in a wide range of applications.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this device offers precise and controllable switching capabilities, making it ideal for applications requiring accurate power control.

Minimum Operating Temperature: -60 °C

The SCR's ability to operate at low temperatures enables its use in environments where temperature fluctuations are common, ensuring consistent performance.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage requirement of 3 V allows for easy interfacing with control circuits, enhancing the SCR's usability in various electronic systems.

Repetitive Peak Off-state Voltage: 150 V

The high repetitive peak off-state voltage rating ensures reliable insulation and prevents voltage breakdown, making the SCR suitable for high-voltage applications.

Maximum Holding Current: 50 mA

The holding current capability of 50 mA ensures stable operation of the SCR in the on-state, preventing unintended turn-off due to fluctuations in current flow.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N684 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

6.5 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

150 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N684 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-476-7854, 5961004767854, 5961-00-087-4939, 5961000874939, 5961-00-963-6301, 5961009636301, 5961-14-343-2725, 5961143432725, 5961-15-050-2840, 5961150502840

NIIN

004767854, 000874939, 009636301, 143432725, 150502840

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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