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2N683A

Texas Instruments

2N683A by Texas Instruments

2N683A by Texas Instruments is a Silicon Controlled Rectifier with 40mA DC Gate Trigger Current, 250A Non Repetitive Peak On-state Current, and 18A Max On-state Current. It operates b/w -60 to 125 °C and has a max DC Gate Trigger Voltage of 3V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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DigiKey

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Vyrian

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Digiode

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DigiKey Marketplace

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Electronics Depot

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Electronic Expediters

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Native Components

USA . 544 parts In-Stock

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Northwest PG Solutions

USA . 1,071 parts In-Stock

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Parana Technologies

USA . 2,269 parts In-Stock

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DigiPath Technology Company

USA . 758 parts In-Stock

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ChromeModa Solutions

Germany . 4,118 parts In-Stock

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IDEA Electronic Components Group

UK . 1,657 parts In-Stock

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Microchip USA

USA . 9,704 parts In-Stock

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Corphita

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Glotronic Ltd.

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A-Plus Industry Inc.

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Overview

Looking to enhance your electronic projects with top-quality components? Look no further than the 2N683A by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers reliable Silicon Controlled Rectifiers (SCR) like the 2N683A that offer unparalleled performance and durability. Whether you're working on power supplies, motor control, or lighting systems, this SCR has got you covered. With a maximum DC Gate Trigger Current of 40 mA and Non Repetitive Peak On-state Current of 250 A, this product ensures efficient operation and long-lasting reliability. Upgrade your projects with the 2N683A today and experience the value and benefits it brings to your designs!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 40 mA

Having a high maximum gate trigger current allows for reliable triggering of the SCR, ensuring consistent performance.

Non Repetitive Peak On-state Current: 250 A

The high non repetitive peak on-state current rating indicates that the SCR can handle large surges of current without being damaged, making it suitable for high power applications.

Maximum On-state Current: 18 A

With a maximum on-state current of 18 A, this SCR is capable of handling moderate to high current loads, making it versatile for various applications.

Maximum Leakage Current: 1 mA

The low maximum leakage current ensures efficient operation and minimal power loss when the SCR is in the off-state.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the SCR to withstand elevated temperatures, increasing its reliability and performance in harsh environments.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier) indicates that this product is a reliable and widely used component for controlling current in electronic circuits.

Repetitive Peak Off-state Voltage: 100 V

The repetitive peak off-state voltage rating indicates that the SCR can sustain voltages up to 100V repeatedly, making it suitable for various voltage control applications.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

The high minimum critical rate of rise of off-state voltage ensures fast response times and reliable voltage regulation in dynamic systems.

Maximum Holding Current: 50 mA

The maximum holding current of 50 mA ensures stable operation once the SCR is triggered, preventing unwanted turn-off during operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N683A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

18 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N683A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-417-8050, 5961004178050

NIIN

004178050

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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