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TIC116E

Texas Instruments

TIC116E by Texas Instruments

TIC116E by Texas Instruments is a single SCR with max. on-state current of 8A, trigger voltage of 1.5V, and non-repetitive peak on-state current of 80A. It is used in applications requiring high power control such as industrial motor drives and lighting systems due to its robust design and wide operating temperature range from -40°C to 110°C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,336 parts In-Stock

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Digiode

USA . 3,122 parts In-Stock

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Parana Technologies

USA . 2,269 parts In-Stock

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$4.009

100+ parts

$372.338

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$3.609

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2,269

$4.009

$372.338

$3.609

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DigiPath Technology Company

USA . 170 parts In-Stock

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$4.415

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$4.415

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ChromeModa Solutions

Germany . 2,870 parts In-Stock

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$4.505

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$3.694

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$4.505

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IDEA Electronic Components Group

UK . 205 parts In-Stock

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$4.505

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$4.054

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AZTECH Wire

Italy . 601 parts In-Stock

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$15.294

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$15.294

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Semicontronic

India . 640 parts In-Stock

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$22.100

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$21.548

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$21.437

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$22.100

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$21.437

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One Stop Electronics

USA . 275 parts In-Stock

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$22.100

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Ampacity Inc.

Singapore . 583 parts In-Stock

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Corphita

USA . 4,762 parts In-Stock

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Corohmni

South Africa . 449 parts In-Stock

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Overview

Looking for a high-quality Silicon Controlled Rectifier that offers reliability and performance? Look no further than the Texas Instruments TIC116E. With a maximum on-state current of 8A and a non-repetitive peak on-state current of 80A, this SCR is perfect for a wide range of applications. Whether you need it for industrial equipment, power supplies, or motor drives, the TIC116E delivers consistent results. Trust in Texas Instruments' reputation for excellence and choose the TIC116E for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SCR, making it suitable for various environmental conditions.

Maximum DC Gate Trigger Current: 20 mA

Allows for precise control over the triggering of the SCR, ensuring reliable operation.

Configuration: SINGLE

Simplified wiring and installation process, reducing complexity and potential points of failure.

Non Repetitive Peak On-state Current: 80 A

High current handling capacity, suitable for applications requiring heavy loads to be switched.

Package Shape: RECTANGULAR

Space-efficient design that can easily fit into compact electronic devices or circuits.

Terminal Form: THROUGH-HOLE

Soldering the SCR onto a PCB is made easier with through-hole terminals, providing a more secure connection.

Maximum On-state Current: 8 A

Capable of handling moderate current levels, suitable for a wide range of applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures efficiency and minimal power wastage when the SCR is in the off state.

Repetitive Peak Reverse Voltage: 500 V

High reverse voltage rating offers protection against voltage spikes or reverse polarity situations.

No. of Terminals: 3

Simplified connectivity with fewer terminals to manage during installation.

Package Style (Meter): FLANGE MOUNT

Easily mountable on various surfaces or heat sinks for effective heat dissipation.

Maximum Operating Temperature: 110 °C

Can operate in high-temperature environments without compromising performance or longevity.

Trigger Device Type: SCR

SCRs are known for their robustness and reliability in controlling high current loads.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in both extreme cold and hot conditions.

Terminal Position: SINGLE

Simplified connection arrangement that aids in easy installation and maintenance.

Maximum RMS On-state Current: 8 A

Continuous current-carrying capacity ensures stable operation under load without overheating.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage requirement for efficient and precise control over switching operations.

Case Connection: ANODE

Specific terminal connection for effective current control and overall functionality of the SCR.

Repetitive Peak Off-state Voltage: 500 V

High off-state voltage rating provides safety and protection against voltage surges or disturbances.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

Ability to handle fast-changing voltages without failure, ensuring stability in voltage regulation.

Maximum Holding Current: 40 mA

Capable of maintaining conduction state without additional trigger signal, suitable for continuous operation applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC116E attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

500 V

Repetitive Peak Reverse Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC116E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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