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TIC62

Texas Instruments

TIC62 by Texas Instruments

TIC62 by Texas Instruments is a single SCR with max. DC gate trigger current of 0.2 mA and non-repetitive peak on-state current of 6 A. It is used in applications requiring a max RMS on-state current of 0.8 A, such as power control systems for industrial equipment or lighting fixtures.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,236 parts In-Stock

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7,236

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Digiode

USA . 98 parts In-Stock

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98

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One Stop Electronics

USA . 866 parts In-Stock

1+ parts

$3.100

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866

$3.100

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Parana Technologies

USA . 802 parts In-Stock

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$3.375

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$3.902

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802

$3.375

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$3.902

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DigiPath Technology Company

USA . 1,035 parts In-Stock

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$3.716

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1,035

$3.716

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ChromeModa Solutions

Germany . 6,246 parts In-Stock

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$3.792

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$3.109

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6,246

$3.792

$3.109

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IDEA Electronic Components Group

UK . 969 parts In-Stock

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$3.792

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$3.413

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969

$3.792

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$3.413

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AZTECH Wire

Italy . 587 parts In-Stock

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$12.681

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587

$12.681

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Semicontronic

India . 238 parts In-Stock

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$13.100

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$12.772

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$12.707

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238

$13.100

$12.772

$12.707

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Ampacity Inc.

Singapore . 260 parts In-Stock

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$15.100

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260

$15.100

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Corphita

USA . 4,534 parts In-Stock

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Corohmni

South Africa . 445 parts In-Stock

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Overview

Elevate your electronic projects with the TIC62 by Texas Instruments, a top-quality Silicon Controlled Rectifier that offers unmatched performance and reliability. Manufactured by a trusted industry leader, this SCR is perfect for a wide range of applications, from power control to motor drives. With its innovative design and advanced technology, the TIC62 delivers exceptional value, efficiency, and precision, making it the ideal choice for customers seeking superior quality and performance in their electronic components. Upgrade your projects today with the TIC62 and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides strong protection for the SCR, making it durable and long-lasting.

Maximum DC Gate Trigger Current: 0.2 mA

The low gate trigger current allows for efficient control of the SCR, ensuring it operates reliably and accurately.

Non Repetitive Peak On-state Current: 6 A

The high peak on-state current capability of 6A enables the SCR to handle heavy loads with ease, making it suitable for a wide range of applications.

Terminal Form: WIRE

The wire terminal form allows for easy and secure connection of the SCR to other components, facilitating quick and hassle-free installation.

Repetitive Peak Reverse Voltage: 100 V

The high repetitive peak reverse voltage rating of 100V ensures the SCR can withstand reverse voltage spikes without damage, enhancing its reliability and longevity.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC62 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

7 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

Maximum Leakage Current:

.05 mA

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC62 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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