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TIC63

Texas Instruments

TIC63 by Texas Instruments

TIC63 by Texas Instruments is a single SCR with a max DC gate trigger current of 0.2mA and non-repetitive peak on-state current of 6A. This cylindrical package SCR, with plastic/epoxy body material, is ideal for applications requiring a max RMS on-state current of 0.8A such as power control circuits in industrial settings.

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 4,389 parts In-Stock

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Digiode

USA . 201 parts In-Stock

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Ampacity Inc.

Singapore . 787 parts In-Stock

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$3.100

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787

$3.100

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Parana Technologies

USA . 1,031 parts In-Stock

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$4.370

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$405.812

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$3.933

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DigiPath Technology Company

USA . 1,247 parts In-Stock

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$4.812

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ChromeModa Solutions

Germany . 942 parts In-Stock

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$4.910

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$4.026

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942

$4.910

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IDEA Electronic Components Group

UK . 846 parts In-Stock

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$4.910

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$4.419

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846

$4.910

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AZTECH Wire

Italy . 813 parts In-Stock

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$5.479

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Semicontronic

India . 452 parts In-Stock

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$22.100

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$21.548

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$21.437

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One Stop Electronics

USA . 941 parts In-Stock

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$29.100

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Corphita

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Corohmni

South Africa . 57 parts In-Stock

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Overview

Unlock the power of reliable and efficient electrical control with the TIC63 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and performance. The TIC63 belongs to the category of Silicon Controlled Rectifiers (SCR), making it ideal for a wide range of applications. This product offers customers tremendous value, benefits, and advantages, ensuring smooth and precise control over electrical currents. Upgrade your systems with the TIC63 and experience unparalleled efficiency and reliability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring long-lasting performance.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient control of the SCR, reducing power consumption and heat generation.

Configuration: SINGLE

Single configuration simplifies the circuit design and installation process, making it easier to use.

Non Repetitive Peak On-state Current: 6 A

The high non-repetitive peak on-state current allows for handling sudden power surges or spikes effectively.

Package Shape: ROUND

Round shape facilitates easy mounting and installation in various electronic devices.

Terminal Form: WIRE

Wire terminals provide secure connections and easy integration into the circuit.

Maximum On-state Current: 0.8 A

The maximum on-state current rating ensures stable and reliable operation under normal operating conditions.

Maximum Leakage Current: 0.05 mA

Low leakage current helps in reducing power losses and improving efficiency of the SCR.

Repetitive Peak Reverse Voltage: 150 V

High repetitive peak reverse voltage rating ensures protection against reverse polarity events.

No. of Terminals: 3

Having 3 terminals allows for easy connection and control of the SCR in a circuit.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and space-saving design, ideal for applications with limited space.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the SCR to function reliably in various environmental conditions.

Trigger Device Type: SCR

Being an SCR trigger device, it offers precise control over the switching operation and can handle high power applications effectively.

Minimum Operating Temperature: -60 °C

Low minimum operating temperature ensures the SCR can operate in extreme cold environments without any issues.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and wiring of the SCR in a circuit.

Maximum RMS On-state Current: 0.8 A

The maximum RMS on-state current rating ensures continuous and stable performance of the SCR under varying load conditions.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage ensures minimal power consumption and efficient control over the SCR operation.

Repetitive Peak Off-state Voltage: 150 V

High repetitive peak off-state voltage rating provides protection against voltage spikes and surges.

Maximum Holding Current: 5 mA

The maximum holding current ensures the SCR remains in the on-state even after the gate trigger signal is removed.

Nominal Circuit Commutated Turn-off Time: 7 us

Fast turn-off time allows for quick and efficient switching of the SCR, reducing power losses and improving overall performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC63 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

7 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

Maximum Leakage Current:

.05 mA

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

150 V

Repetitive Peak Reverse Voltage:

150 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC63 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

4730-15-147-8869, 4730151478869

NIIN

151478869

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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