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2N682

Texas Instruments

2N682 by Texas Instruments

2N682 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 30mA, Non Repetitive Peak On-state Current of 150A, and Max On-state Current of 25A. It operates b/w -60 to 125°C and has a Repetitive Peak Off-state Voltage of 50V. Ideal for power control applications requiring high current handling capabilities.

Median Price

$19.600

Lifecycle Status

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Forefront Electronics and Design

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American Microsemiconductor Inc.

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ICP Electronique

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Mil-Aero Solutions, Inc.

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Legend Electronics Inc.

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Tech-Mark Corp

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First Choice Components Inc.

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Sunrise Surplus Inc.

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Native Components

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Northwest PG Solutions

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IDEA Electronic Components Group

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ChromeModa Solutions

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DigiPath Technology Company

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AZTECH Wire

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Microchip USA

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One Stop Electronics

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Parana Technologies

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Glotronic Ltd.

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Overview

Unleash the power of the Texas Instruments 2N682 Silicon Controlled Rectifier (SCR), a high-quality component designed to deliver reliability and efficiency. With a maximum DC Gate Trigger Current of 30 mA and Non-Repetitive Peak On-state Current of 150 A, this SCR is perfect for a variety of applications. Whether you're in need of precise control in industrial machinery or robust performance in power supplies, the 2N682 offers unmatched value and benefits. Trust in Texas Instruments' reputation for excellence and experience the advantages that the 2N682 brings to your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 30 mA

Low gate trigger current ensures efficient operation and reliable triggering of the SCR.

Non Repetitive Peak On-state Current: 150 A

High on-state current capability allows the SCR to handle large peak currents without damage.

Maximum On-state Current: 25 A

The SCR can continuously handle high current levels up to 25 A, making it suitable for various applications.

Maximum Leakage Current: 6.5 mA

Low leakage current helps in reducing power losses and improving the efficiency of the SCR.

Maximum Operating Temperature: 125 °C

Wide operating temperature range of up to 125°C ensures the SCR can operate reliably in harsh environments.

Trigger Device Type: SCR

Being an SCR, this device offers reliable and robust switching performance, making it suitable for high-power applications.

Minimum Operating Temperature: -60 °C

The SCR can operate at low temperatures as well, making it versatile for use in various temperature conditions.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage requirement of 3 V helps in easy triggering of the SCR with minimal control signal.

Repetitive Peak Off-state Voltage: 50 V

The SCR can withstand repetitive peak off-state voltages of up to 50V, making it suitable for applications with high voltage requirements.

Minimum Critical Rate of Rise of Off-state Voltage: 30 V/us

Fast rate of rise of off-state voltage of 30 V/us ensures reliable turn-off operation of the SCR, especially in high frequency applications.

Maximum Holding Current: 50 mA

High holding current of 50 mA allows the SCR to remain in the on-state even after the gate signal is removed, ensuring stability in operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N682 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

6.5 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N682 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5960-99-197-8881, 5960991978881, 5961-00-459-4005, 5961004594005, 5961-00-772-9067, 5961007729067, 5961-01-107-8074, 5961011078074, 5961-21-810-0828, 5961218100828, 5961-99-643-5324, 5961996435324, 5961-01-483-5643, 5961014835643, 5961-14-272-2815, 5961142722815, 5961-99-140-8922, 5961991408922, 5961-99-141-9846, 5961991419846

NIIN

991978881, 004594005, 007729067, 011078074, 218100828, 996435324, 014835643, 142722815, 991408922, 991419846

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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