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TT251N12KOFHPSA1

Infineon Technologies

TT251N12KOFHPSA1 by Infineon Technologies

TT251N12KOFHPSA1 by Infineon Technologies is a Silicon Controlled Rectifier with 1.4V Max On-state Voltage, 200mA Max DC Gate Trigger Current, and 9100A Non Repetitive Peak On-state Current. It is ideal for applications requiring high current handling capabilities such as industrial power supplies and motor control systems.

Median Price

$116.400

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2 parts In-Stock

1+ parts

$116.400

100+ parts

$109.420

1k+ parts

$102.430

10k+ parts

-

2

$116.400

$109.420

$102.430

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 800 parts In-Stock

1+ parts

$120.810

100+ parts

-

1k+ parts

-

10k+ parts

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800

$120.810

-

-

-

Digiode

USA . 140 parts In-Stock

1+ parts

$128.716

100+ parts

-

1k+ parts

-

10k+ parts

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140

$128.716

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-

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Vyrian

USA . 2 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 15 parts In-Stock

1+ parts

$3.350

100+ parts

$3.216

1k+ parts

$3.082

10k+ parts

-

15

$3.350

$3.216

$3.082

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AZTECH Wire

Italy . 559 parts In-Stock

1+ parts

$12.857

100+ parts

-

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559

$12.857

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Ampacity Inc.

Singapore . 2 parts In-Stock

1+ parts

$115.170

100+ parts

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2

$115.170

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$118.394

100+ parts

-

1k+ parts

$113.658

10k+ parts

-

1,000

$118.394

-

$113.658

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Continental Prestige Electronics

USA . 3,961 parts In-Stock

1+ parts

$120.810

100+ parts

-

1k+ parts

-

10k+ parts

$118.394

3,961

$120.810

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-

$118.394

Corphita

USA . 876 parts In-Stock

1+ parts

$121.941

100+ parts

-

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876

$121.941

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Argo Parts USA

USA . 3,240 parts In-Stock

1+ parts

-

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3,240

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Microchip USA

USA . 2,884 parts In-Stock

1+ parts

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2,884

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Perfect Parts

USA . 10 parts In-Stock

1+ parts

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10

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Overview

Upgrade your power system with the TT251N12KOFHPSA1 by Infineon Technologies. This high-quality Silicon Controlled Rectifier offers unmatched performance and reliability, thanks to its advanced design and superior manufacturing by Infineon Technologies. Ideal for a variety of applications, this SCR provides maximum on-state voltage of 1.4V, making it perfect for demanding industrial environments. With a maximum on-state current of 250A and a non-repetitive peak on-state current of 9100A, this product delivers exceptional value and benefits to customers looking for efficient and reliable power control solutions. Experience the advantages of the TT251N12KOFHPSA1 and take your power system to the next level.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low on-state voltage ensures efficient operation and reduces power loss.

Maximum DC Gate Trigger Current: 200 mA

Gate trigger current within a safe range for reliable performance.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Series connection and center tap configuration provide flexibility in circuit design.

Non Repetitive Peak On-state Current: 9100 A

High peak current rating allows for handling of heavy loads and surge currents.

Package Shape: RECTANGULAR

Rectangular package shape offers easy installation and mounting options.

No. of Elements: 2

Dual elements enhance current carrying capacity and improve reliability.

Maximum On-state Current: 250 A

High on-state current rating suitable for various applications.

Quick Connects Description: 2G-2GR

Quick connects allow for easy and fast installation.

Maximum Leakage Current: 50 mA

Low leakage current ensures efficiency and reliable operation.

Repetitive Peak Reverse Voltage: 1200 V

High reverse voltage rating ensures protection against voltage spikes.

No. of Terminals: 7

Sufficient terminals for easy connectivity in the circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure mounting and heat dissipation.

Maximum Operating Temperature: 125 °C

High operating temperature range suitable for industrial applications.

Trigger Device Type: SCR

Silicon Controlled Rectifier type offers precise control over the conduction of current.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in harsh environments.

Terminal Position: UPPER

Upper terminal position facilitates easy connection in the circuit.

Maximum RMS On-state Current: 410 A

High RMS current rating ensures continuous and reliable operation.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage for efficient gate control.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents electrical interference.

Repetitive Peak Off-state Voltage: 1200 V

High off-state voltage rating for protection against voltage transients.

Minimum Critical Rate of Rise of Off-state Voltage: 1000 V/us

Fast rate of rise rating prevents voltage overshoot and protects the circuit.

Maximum Holding Current: 300 mA

Holding current rating ensures stable operation after triggering.

Screw Terminals Description: A-K-AK

Screw terminals provide secure connections in the circuit.

Nominal Circuit Commutated Turn-off Time: 250 us

Fast turn-off time for efficient switching and operation.

Reference Standard: IEC-747-6; UL RECOGNIZED

Compliance with international standards ensures quality and reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TT251N12KOFHPSA1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

Nominal Circuit Commutated Turn-off Time:

250 us

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

200 mA

Maximum DC Gate Trigger Voltage:

2 V

Quick Connects Description:

2G-2GR

Screw Terminals Description:

A-K-AK

Maximum Holding Current:

300 mA

JESD-30 Code:

R-XUFM-X7

Maximum Leakage Current:

50 mA

Non Repetitive Peak On-state Current:

9100 A

No. of Elements:

2

No. of Terminals:

7

Maximum On-state Voltage:

1.4 V

Maximum On-state Current:

250 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

410 A

Reference Standard:

IEC-747-6; UL RECOGNIZED

Repetitive Peak Off-state Voltage:

1200 V

Repetitive Peak Reverse Voltage:

1200 V

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TT251N12KOFHPSA1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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