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2N5062

Texas Instruments

2N5062 by Texas Instruments

2N5062 by Texas Instruments is a single SCR with max DC gate trigger current of 0.2 mA and non-repetitive peak on-state current of 10 A. It is used in applications requiring a max RMS on-state current of 0.8 A, such as power control circuits for up to 100 V repetitive peak reverse voltage.

Median Price

$0.600

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 2,280 parts In-Stock

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$0.600

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$0.360

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$0.260

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$0.200

2,280

$0.600

$0.360

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$0.200

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Freelance Electronics

USA . 2 parts In-Stock

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$0.157

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DF Sales Co.

USA . 54 parts In-Stock

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$0.160

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DF Sales Co.

USA . 54 parts In-Stock

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Component Electronics Inc.

Canada . 20 parts In-Stock

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$0.380

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$0.290

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Digiode

USA . 4,642 parts In-Stock

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$0.570

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Vyrian

USA . 3,154 parts In-Stock

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American Microsemiconductor Inc.

USA . 27 parts In-Stock

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$3.210

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Electronic Expediters

USA . 4,257 parts In-Stock

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Bristol Electronics

USA . 3,607 parts In-Stock

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$0.394

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$0.273

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,015 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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Tech-Mark Corp

USA . 635 parts In-Stock

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Resion

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Pegasus Components GmbH

Germany . 425 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 399 parts In-Stock

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EPE Components Inc.

USA . 105 parts In-Stock

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LWI Electronics Inc

India . 104 parts In-Stock

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Zilex Electronics Inc.

Canada . 100 parts In-Stock

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100

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Nova Conductors

Japan . 100 parts In-Stock

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Manotoh

Italy . 95 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 90 parts In-Stock

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MISTER SPROCKETS

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Sogenti Electronics

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Semi Source

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Mil-Aero Solutions, Inc.

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PC Components Company LLC

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ES Components

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LittleDiode

UK . 53 parts In-Stock

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Sinequanon

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M&R Communications

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Lakeview Electronics

USA . 38 parts In-Stock

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ICP Electronique

France . 30 parts In-Stock

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Huijzer Components

Netherlands . 28 parts In-Stock

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Electronics Depot

USA . 10 parts In-Stock

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GES GmbH

Germany . 8 parts In-Stock

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Holdelec - ElecDif-Pro

France . 5 parts In-Stock

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ECAB

Sweden . 1 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 384 parts In-Stock

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$0.157

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384

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Corphita

USA . 2,435 parts In-Stock

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$0.540

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Parana Technologies

USA . 558 parts In-Stock

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$2.667

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$3.154

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$2.667

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DigiPath Technology Company

USA . 2,013 parts In-Stock

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$2.937

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$2.702

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ChromeModa Solutions

Germany . 706 parts In-Stock

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$2.997

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$2.458

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$2.997

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IDEA Electronic Components Group

UK . 291 parts In-Stock

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$2.997

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$2.697

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Advanced Electronics

New Zealand . 1,090 parts In-Stock

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$4.293

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$3.907

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$3.520

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Problanco Electronics

Mexico . 7,609 parts In-Stock

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SupplyDigital Components

Austria . 7,089 parts In-Stock

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Perfect Parts

USA . 5,440 parts In-Stock

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Argo Parts USA

USA . 5,395 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kulean Microsystems

USA . 2,539 parts In-Stock

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Continental Prestige Electronics

USA . 2,327 parts In-Stock

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TANS Electronics

Latvia . 1,658 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 651 parts In-Stock

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651

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RTC Component Inc.

USA . 300 parts In-Stock

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Assy Fe

Spain . 10 parts In-Stock

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Overview

Elevate your electronic projects with the Texas Instruments 2N5062 Silicone Controlled Rectifier. Crafted with precision and expertise, this SCR offers reliable performance and durability for a variety of applications. From controlling power in industrial machinery to regulating voltage in consumer electronics, the 2N5062 is the versatile solution you need. Trust in Texas Instruments' reputation for excellence and innovation, and experience the value and benefits that this high-quality component brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, making the SCR reliable for long-term use.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient control and switching of the SCR, reducing power dissipation and improving overall performance.

Configuration: SINGLE

Single configuration simplifies the setup and installation process, making it easy to integrate the SCR into various electronic systems.

Maximum On-state Current: 0.51 A

With a high on-state current rating, this SCR can handle moderate power loads with ease and reliability.

Repetitive Peak Reverse Voltage: 100 V

The high repetitive peak reverse voltage rating ensures protection against reverse polarity and voltage spikes, enhancing the SCR's durability.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this SCR can withstand harsh environmental conditions and perform reliably in a wide range of applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N5062 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

30 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.51 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N5062 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-356-3555, 5961003563555, 5961-99-118-6188, 5961991186188

NIIN

003563555, 991186188

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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